MT29F1G08ABAEAWP-IT:E TR

Product Overview

The MT29F1G08ABAEAWP-IT:E TR from Micron Technology Inc. is a non-volatile NAND flash memory IC with a 1Gbit capacity organized as 128M x 8. It uses a parallel memory interface and operates from a 2.7V to 3.6V supply. The device uses a 48-TSOP I surface-mount package, with a 48-TFSOP body specified as 0.724 in (18.40 mm) wide. Its operating temperature range is -40°C to 85°C (TA).

Key Features

• 1Gbit non-volatile flash memory capacity.
• NAND flash technology with 128M x 8 memory organization.
• Parallel memory interface.
• 2.7V to 3.6V supply voltage range.
• 48-TSOP I surface-mount package with 48-TFSOP 0.724 in (18.40 mm) width.
• Operating temperature range of -40°C to 85°C (TA).

Applications

• Embedded systems that need non-volatile bulk data retention with a parallel memory interface.
• Data logging equipment that stores recorded measurements between power cycles.
• Media or file storage subsystems that require a 1Gbit NAND flash device.

Design & Procurement Notes

When selecting this device, verify that the board power rail remains within 2.7V to 3.6V and that the ambient operating temperature stays within -40°C to 85°C. The 128M x 8 organization and parallel interface should be matched to the host memory controller or bus architecture. The 48-TSOP I surface-mount package and 48-TFSOP width should be checked against the PCB footprint, land pattern, and assembly constraints. Because the memory is non-volatile, data retention after power removal should be considered in system power sequencing.