MT29F2G08ABAGAH4-IT:G TR

Product Overview

The MT29F2G08ABAGAH4-IT:G TR from Micron Technology Inc. is a non-volatile FLASH memory integrated circuit using NAND technology. It provides a 2Gbit memory capacity organized as 256M x 8 and uses a parallel memory interface. The device operates from a 2.7V to 3.6V supply and is specified for an ambient operating temperature range of -40°C to 85°C. It is supplied in a 63-VFBGA package with a 9x11 body size and is intended for surface mounting.

Key Features

• Non-volatile FLASH memory architecture based on NAND technology
• 2Gbit capacity with 256M x 8 organization
• Parallel memory interface
• 2.7V to 3.6V supply voltage range
• Operating temperature range of -40°C to 85°C (TA)
• 63-VFBGA (9x11) surface-mount package

Applications

• Embedded systems that store firmware, boot code, or configuration data in non-volatile memory
• Data acquisition and logging equipment that retains recorded measurements after power is removed
• Solid-state storage subsystems that use parallel NAND flash devices as memory components

Design & Procurement Notes

Designers should confirm host compatibility with the 256M x 8 organization, the parallel interface, and the 2.7V to 3.6V supply range. Board layout should account for the 63-VFBGA (9x11) surface-mount package, including land pattern, assembly, and inspection requirements. The final thermal environment should be checked against the -40°C to 85°C ambient operating range. The supply voltage and temperature limits should be included in system power and thermal budget calculations. Procurement should verify that the exact manufacturer part number matches the required package and electrical characteristics.