MT29F8G08ABACAH4-IT:C TR

Product Overview

The MT29F8G08ABACAH4-IT:C TR from Micron Technology Inc. is a non-volatile NAND flash memory device organized as 1G x 8 with an 8Gbit capacity. It uses a parallel memory interface and is housed in a surface-mount 63-VFBGA (9x11) package. The device operates from a 2.7V to 3.6V supply and is specified for an ambient temperature range of -40°C to 85°C.

Key Features

• 8Gbit non-volatile NAND flash memory capacity.
• 1G x 8 memory organization for parallel interfacing.
• 2.7V to 3.6V supply voltage range.
• Surface-mount 63-VFBGA (9x11) package.
• Operating temperature range of -40°C to 85°C ambient.

Applications

• Embedded systems that connect NAND flash through a parallel memory interface.
• Devices that require non-volatile data retention in a 2.7V to 3.6V supply environment.
• Equipment that operates within an ambient temperature range of -40°C to 85°C.

Design & Procurement Notes

When designing with this part, confirm that the host system can interface with an 8Gbit, 1G x 8 parallel NAND flash device and that the board layout accommodates the 63-VFBGA (9x11) surface-mount package. The power supply should remain within the 2.7V to 3.6V range during normal operation, and the expected ambient environment should stay between -40°C and 85°C. Because the memory organization is 1G x 8, address mapping and bus width should be reviewed to ensure compatibility with the selected controller or host interface before finalizing the schematic and PCB layout. Confirm the exact manufacturer part number, MT29F8G08ABACAH4-IT:C TR, in the bill of materials.