MT29F1G01ABAFDWB-IT:F TR

Product Overview

MT29F1G01ABAFDWB-IT:F TR is a Micron Technology Inc. non-volatile FLASH memory IC that provides 1Gbit of NAND storage in an 8-UDFN package, with the device package specified as 8-UPDFN (8x6) (MLP8). The device uses a 1G x 1 memory organization and a serial peripheral interface (SPI), making it suitable for designs that require serial access to the flash memory array. It operates from a 2.7V to 3.6V supply and has an ambient operating temperature range of -40°C to 85°C. The surface-mount package supports board-level integration, while the NAND technology and SPI interface define the basic memory characteristics that designers must consider when integrating the device into embedded hardware.

Key Features

• 1Gbit non-volatile FLASH memory using NAND technology with a 1G x 1 organization.
• Serial peripheral interface (SPI) for memory access.
• Supply voltage range of 2.7V to 3.6V.
• Operating temperature range of -40°C to 85°C (TA).
• Surface-mount 8-UDFN package, specified as 8-UPDFN (8x6) (MLP8).

Applications

• Embedded systems that require non-volatile storage of firmware, configuration data, or application data through an SPI interface.
• Portable or battery-powered devices that need to retain measurement logs or calibration information while power is removed.
• Surface-mount electronic assemblies where an 8-UDFN package and serial flash interface provide non-volatile data storage.

Design & Procurement Notes

Designers should confirm that the host controller supports NAND flash accessed through SPI and can address the 1G x 1 memory organization. The 2.7V to 3.6V supply range should be checked against the system power rail, and SPI signal routing should account for the package and board layout. The 8-UPDFN (8x6) (MLP8) surface-mount package requires footprint and land-pattern compatibility, as well as attention to thermal and mechanical conditions within the -40°C to 85°C (TA) operating range. Because the device is non-volatile FLASH, system software and hardware must consider NAND memory behavior, including access patterns and data management, when integrating the part.