2SK3562
TOSHIBA 2SK3562 N-channel 600V 6A MOSFET, low Rds(on), for SMPS and switching regulator
- ПРОИЗВОДИТЕЛЬ
- Toshiba Semiconductor and Storage
- КАТЕГОРИЯ ТОВАРА
- МОП-транзистор
- Корпус
- TO-220F
- Склад
- 1,500 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Toshiba Semiconductor and Storage |
|---|---|
| КАТЕГОРИЯ ТОВАРА | МОП-транзистор |
| Application | SMPS, switching regulator, inverter, DC-DC converter, industrial power supply |
| Body Diode | Built-in fast recovery diode |
| Channel Type | Enhancement Mode |
| Continuous Drain Current (Id) | 6A @ Tc=25°C |
| Drain-Source Resistance (Rds(on)) | ~0.9Ω (typical) / up to 1.25Ω max |
| Drain-Source Voltage (VDS) | 600V |
| Gate Charge (Qg) | ~25–30 nC |
| Gate Threshold Voltage (Vth) | 2.0 – 4.0V |
| Gate-Source Voltage (VGS) | ±30V |
| Input Capacitance (Ciss) | ~1000–1200 pF |
| Junction Temperature | 150°C max |
| Manufacturer | Toshiba / ISC / equivalent K3562 marking |
| Output Capacitance (Coss) | ~150 pF |
| Package Type | TO-220 / TO-220SIS |
| Power Dissipation | 40W |
| Pulsed Drain Current | ~24A |
| Storage Temperature | -55°C to +150°C |
| Switching Speed | Fast switching optimized for SMPS |
| Technology | π-MOS VI high-voltage MOSFET |
| Техническая документация | Запросить даташит |
Сводка по закупке
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Подробное описание 2SK3562
Product Overview
2SK3562 is a silicon N-channel MOSFET from Toshiba, designed for switching regulator applications. The device is supplied in a TO-220SIS through-hole power package and features low drain-source on-resistance, high forward transfer admittance and low leakage current. With a 600V drain-source voltage rating, 6A drain current and 40W power dissipation class, it is suitable for switching power supplies, DC-DC converter circuits, industrial control boards and maintenance or replacement projects that require reliable high-voltage MOSFET switching performance.
Key Features
Manufacturer: Toshiba
Part Number: 2SK3562
Device Type: Silicon N-channel MOSFET
Product Category: Discrete semiconductor / power MOSFET
Package: TO-220SIS through-hole power package
Polarity: N-channel
MOSFET Technology: π-MOSVI
Drain-Source Voltage: 600V
Drain Current: 6A
Pulsed Drain Current: 24A class
Gate-Source Voltage: ±30V maximum class
Power Dissipation: 40W
On-Resistance: 0.9Ω typical / 1.25Ω maximum class
Gate Threshold Voltage: 2.0V to 4.0V class
Typical Use: Switching regulators, switching power supplies, DC-DC converters and high-voltage power switching circuits
Ordering / Packaging Note: 2SK3562 may be supplied as Toshiba old-stock or replacement material; buyers should verify the original brand, package marking, pin configuration, datasheet version and thermal design requirements before production use.
Applications
2SK3562 can be used in electronic circuits that require high-voltage N-channel MOSFET switching performance. Typical applications include switching regulator circuits, AC/DC switching power supplies, DC-DC converter stages, industrial control equipment, power management modules, inverter auxiliary power stages, communication equipment power supplies, maintenance projects and repair applications. It is also suitable for BOM review where a 600V / 6A N-channel MOSFET in a TO-220SIS package is required.
Quality & Sourcing
Antrex Electronics can support 2SK3562 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required date code, packaging requirements and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection and third-party testing support when required. OEMs, EMS providers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find part requests for sourcing assistance.
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