2SK3878
TOSHIBA 2SK3878 N-channel 900V 9A MOSFET, π-MOSIV, for SMPS and high-voltage switching
- ПРОИЗВОДИТЕЛЬ
- Toshiba Semiconductor and Storage
- КАТЕГОРИЯ ТОВАРА
- МОП-транзистор
- Корпус
- TO-3P
- Склад
- 1,500 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Toshiba Semiconductor and Storage |
|---|---|
| КАТЕГОРИЯ ТОВАРА | МОП-транзистор |
| Application | SMPS, switching regulator, UPS, inverter, industrial power supply, motor drive |
| Channel Type | Enhancement Mode |
| Continuous Drain Current (Id) | 9A @ Tc=25°C |
| Drain-Source Resistance (Rds(on)) | ~1.0Ω (typical) / up to 1.3Ω max |
| Drain-Source Voltage (VDS) | 900V |
| Gate Threshold Voltage (Vth) | 2.0 – 4.0V |
| Gate-Source Voltage (VGS) | ±30V |
| Input Capacitance (Ciss) | ~2200 pF |
| Junction Temperature | 150°C max |
| Manufacturer | Toshiba |
| Output Capacitance (Coss) | ~190 pF |
| Package Type | TO-3P / SC-65 |
| Power Dissipation | 150W (Tc=25°C) |
| Pulsed Drain Current | 27A |
| Reverse Recovery Time (trr) | ~1 µs (body diode) |
| Storage Temperature | -55°C to +150°C |
| Switching Characteristics | Fast switching optimized for SMPS |
| Technology | π-MOSIV high-voltage MOSFET |
| Техническая документация | Запросить даташит |
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Подробное описание 2SK3878
Product Overview
2SK3878 is a silicon N-channel MOSFET from Toshiba, designed for switching regulator and high-efficiency power switching applications. The device is supplied in a TO-3P / SC-65 through-hole power package and features low drain-source on-resistance, high-voltage capability and fast switching performance. With a 900V drain-source voltage rating, 9A drain current and 150W power dissipation class, it is suitable for switching power supplies, DC-DC converter circuits, industrial control boards and maintenance or replacement projects that require reliable high-voltage MOSFET switching performance.
Key Features
Manufacturer: Toshiba
Part Number: 2SK3878
Device Type: Silicon N-channel MOSFET
Product Category: Discrete semiconductor / power MOSFET
Package: TO-3P / SC-65 through-hole power package
Polarity: N-channel
MOSFET Technology: π-MOSIV
Drain-Source Voltage: 900V
Drain Current: 9A
Gate-Source Voltage: ±30V maximum class
Power Dissipation: 150W class
On-Resistance: 1.3Ω maximum at VGS = 10V
Input Capacitance: 2200pF typical
Typical Use: Switching regulators, switching power supplies, DC-DC converters and high-voltage power switching circuits
Ordering / Packaging Note: Toshiba marks 2SK3878 as not recommended for new design; buyers should verify the original brand, package marking, pin configuration, datasheet version and replacement options before production use.
Applications
2SK3878 can be used in electronic circuits that require high-voltage N-channel MOSFET switching performance. Typical applications include switching regulator circuits, AC/DC switching power supplies, DC-DC converter stages, industrial control equipment, power management modules, inverter auxiliary power stages, communication equipment power supplies, maintenance projects and repair applications. It is also suitable for BOM review where a 900V / 9A N-channel MOSFET in a TO-3P / SC-65 package is required.
Quality & Sourcing
Antrex Electronics can support 2SK3878 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required date code, packaging requirements and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection and third-party testing support when required. OEMs, EMS providers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find part requests for sourcing assistance.
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