料號

2SK3562

TOSHIBA 2SK3562 N-channel 600V 6A MOSFET, low Rds(on), for SMPS and switching regulator

產品分類
MOSFET
封裝
TO-220F
庫存
1,500 件
供貨狀態
當前數量需確認。
詢價內容包括: 價格 庫存確認 生產批次 交期
可按要求提供產品實拍及檢測支援。

產品屬性

製造商 Toshiba Semiconductor and Storage
產品分類 MOSFET
Application SMPS, switching regulator, inverter, DC-DC converter, industrial power supply
Body Diode Built-in fast recovery diode
Channel Type Enhancement Mode
Continuous Drain Current (Id) 6A @ Tc=25°C
Drain-Source Resistance (Rds(on)) ~0.9Ω (typical) / up to 1.25Ω max
Drain-Source Voltage (VDS) 600V
Gate Charge (Qg) ~25–30 nC
Gate Threshold Voltage (Vth) 2.0 – 4.0V
Gate-Source Voltage (VGS) ±30V
Input Capacitance (Ciss) ~1000–1200 pF
Junction Temperature 150°C max
Manufacturer Toshiba / ISC / equivalent K3562 marking
Output Capacitance (Coss) ~150 pF
Package Type TO-220 / TO-220SIS
Power Dissipation 40W
Pulsed Drain Current ~24A
Storage Temperature -55°C to +150°C
Switching Speed Fast switching optimized for SMPS
Technology π-MOS VI high-voltage MOSFET
資料表 索取數據表
採購資訊

採購概覽

2SK3562 的主要供貨及採購資訊。

查詢價格及供貨
料號 2SK3562
供貨狀態 列示庫存 1,500 pcs 當前數量需確認。
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生產批次與批號 可提供核實 可按要求核對生產批次、批號及標籤資料。
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2SK3562 詳細描述

Product Overview

2SK3562 is a silicon N-channel MOSFET from Toshiba, designed for switching regulator applications. The device is supplied in a TO-220SIS through-hole power package and features low drain-source on-resistance, high forward transfer admittance and low leakage current. With a 600V drain-source voltage rating, 6A drain current and 40W power dissipation class, it is suitable for switching power supplies, DC-DC converter circuits, industrial control boards and maintenance or replacement projects that require reliable high-voltage MOSFET switching performance.

Key Features

  • Manufacturer: Toshiba

  • Part Number: 2SK3562

  • Device Type: Silicon N-channel MOSFET

  • Product Category: Discrete semiconductor / power MOSFET

  • Package: TO-220SIS through-hole power package

  • Polarity: N-channel

  • MOSFET Technology: π-MOSVI

  • Drain-Source Voltage: 600V

  • Drain Current: 6A

  • Pulsed Drain Current: 24A class

  • Gate-Source Voltage: ±30V maximum class

  • Power Dissipation: 40W

  • On-Resistance: 0.9Ω typical / 1.25Ω maximum class

  • Gate Threshold Voltage: 2.0V to 4.0V class

  • Typical Use: Switching regulators, switching power supplies, DC-DC converters and high-voltage power switching circuits

  • Ordering / Packaging Note: 2SK3562 may be supplied as Toshiba old-stock or replacement material; buyers should verify the original brand, package marking, pin configuration, datasheet version and thermal design requirements before production use.

Applications

2SK3562 can be used in electronic circuits that require high-voltage N-channel MOSFET switching performance. Typical applications include switching regulator circuits, AC/DC switching power supplies, DC-DC converter stages, industrial control equipment, power management modules, inverter auxiliary power stages, communication equipment power supplies, maintenance projects and repair applications. It is also suitable for BOM review where a 600V / 6A N-channel MOSFET in a TO-220SIS package is required.

Quality & Sourcing

Antrex Electronics can support 2SK3562 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required date code, packaging requirements and application information for faster quotation support.

For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection and third-party testing support when required. OEMs, EMS providers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find part requests for sourcing assistance.

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