MT48H16M32LFB5-6 IT:C TR
IC DRAM 512MBIT PAR 90VFBGA
- Manufacturer
- Micron Technology Inc.
- Product Category
- Memory ICs
- Package
- 90-VFBGA
- Stock
- 2,949 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Micron Technology Inc. |
|---|---|
| Product Category | Memory ICs |
| Access Time | 5 ns |
| Clock Frequency | 166 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 16M x 32 |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Product status | Active |
| Supplier Device Package | 90-VFBGA (8x13) |
| Technology | SDRAM - Mobile LPSDR |
| Voltage - Supply | 1.7V ~ 1.95V |
| Write Cycle Time - Word, Page | 15ns |
| Datasheet | View Datasheet PDF |
Procurement Snapshot
Key supply and purchasing information for MT48H16M32LFB5-6 IT:C TR.
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Detailed Description for MT48H16M32LFB5-6 IT:C TR
Product Overview
The MT48H16M32LFB5-6 IT:C TR is a Micron Technology Inc. volatile DRAM device using Mobile LPSDR SDRAM technology. It provides a 512 Mbit memory array organized as 16 M x 32 and uses a parallel memory interface. The device operates from a 1.7 V to 1.95 V supply and supports a 166 MHz clock frequency. Its specified access time is 5 ns, with a 15 ns write cycle time for word or page operations. The component is supplied in a 90-VFBGA (8x13) surface-mount package and is rated for an ambient operating temperature range of -40°C to 85°C.
Key Features
- 512 Mbit volatile DRAM memory array
- Mobile LPSDR SDRAM technology
- 16 M x 32 memory organization
- Parallel memory interface
- 166 MHz clock frequency
- 5 ns access time
- 15 ns write cycle time for word and page operations
- 1.7 V to 1.95 V supply voltage range
- -40°C to 85°C ambient operating temperature range
- 90-VFBGA (8x13) surface-mount package
Applications
- Embedded computing boards that use a parallel DRAM interface for temporary program and data storage.
- Portable or mobile electronic subsystems that require a low-supply-voltage volatile memory array.
- Compact hardware assemblies that need 512 Mbit of DRAM capacity in a 90-VFBGA footprint.
Design & Procurement Notes
Design and procurement checks should confirm that the host controller or processor supports the 16 M x 32 organization, parallel interface, 166 MHz clock, 5 ns access time, and 15 ns write cycle time. The 1.7 V to 1.95 V supply window and -40°C to 85°C ambient rating should be matched to the system power and thermal environment. Because the device uses a 90-VFBGA (8x13) surface-mount package, PCB land pattern, pinout, routing, and soldering process should be verified before layout. The 512 Mbit capacity should also be reconciled with the memory map and address range planned for the design.
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