料號

TC58NVG0S3ETA00

TC58NVG0S3ETA00 is a Toshiba 1Gb SLC NAND Flash memory IC with 128M x 8-bit organization, designed for high-density non-volatile storage applications

產品分類
記憶體 IC
封裝
TSSOP48
庫存
1,500 件
供貨狀態
當前數量需確認。
詢價內容包括: 價格 庫存確認 生產批次 交期
可按要求提供產品實拍及檢測支援。

產品屬性

製造商 Toshiba Semiconductor and Storage
產品分類 記憶體 IC
Applications Embedded Systems, Industrial Equipment, Data Storage, Consumer Electronics
Block Erase Time 2.5ms Typical
Block Size 128KB + 4KB
Features High Reliability, Fast Read/Write Operation, Non-Volatile Data Retention
Interface Type Serial NAND Interface
Memory Density 1 Gbit
Memory Organization 128M x 8-bit
Memory Type SLC NAND Flash EEPROM
Number of Valid Blocks 1004 to 1024 Blocks
Operating Current 30mA Maximum
Operating Temperature 0°C to +70°C
Operating Voltage 3.3V Typical
Package Size 12mm x 20mm
Package Type TSOP-I 48-Pin
Page Size 2112 Bytes (2048 + 64 Bytes)
Part Number TC58NVG0S3ETA00
Pin Count 48 Pins
Program Time 300µs Typical per Page
Read Cycle Time 25ns Minimum
Standby Current 50µA Maximum
Supply Voltage 2.7V to 3.6V
Technology CMOS Silicon Gate Process
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採購資訊

採購概覽

TC58NVG0S3ETA00 的主要供貨及採購資訊。

查詢價格及供貨
料號 TC58NVG0S3ETA00
供貨狀態 列示庫存 1,500 pcs 當前數量需確認。
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生產批次與批號 可提供核實 可按要求核對生產批次、批號及標籤資料。
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可在訂單確認前審查標籤、批號、生產批次及現有供應鏈文件。

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測試支援
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TC58NVG0S3ETA00 詳細描述

Product Overview

TC58NVG0S3ETA00 is a Toshiba 1Gbit SLC NAND Flash Memory device designed for high-density non-volatile data storage applications. Featuring a 1Gb (128M × 8 bit) NAND EEPROM architecture, 3.3V power supply operation, serial I/O interface and TSOP-I 48-pin package, this device provides reliable data retention, fast access performance and low power consumption. It is suitable for embedded storage systems, industrial equipment, digital imaging devices, voice recorders and other applications requiring stable flash memory storage. 

Key Features

  • Manufacturer: Toshiba

  • Part Number: TC58NVG0S3ETA00

  • Product Type: SLC NAND Flash Memory

  • Memory Density: 1Gbit

  • Memory Organization: 128M × 8 bit

  • Memory Technology: Single-Level Cell (SLC) NAND EEPROM

  • Supply Voltage: 2.7V to 3.6V

  • Operating Voltage: 3.3V typical

  • Interface Type: Serial NAND interface

  • Data Bus Width: 8-bit I/O

  • Page Size: 2112 bytes (2048 + 64 bytes spare area)

  • Block Size: 128K bytes + 4K bytes spare area

  • Access Time: 25μs max. cell array to register

  • Program Time: 300μs/page typical

  • Erase Time: 2.5ms/block typical

  • Operating Current: 30mA max.

  • Standby Current: 50μA max.

  • Package Type: TSOP-I 48-pin package

  • Package Size: 12mm × 20mm, 0.5mm pitch

  • Operating Temperature Range: 0°C to +70°C

  • Features: High reliability, fast data transfer, low power consumption and compact storage design

  • Datasheet: TC58NVG0S3ETA00 datasheet PDF available for technical verification before production use. 

Applications

TC58NVG0S3ETA00 is designed for embedded systems requiring reliable non-volatile memory storage. Typical applications include solid-state storage devices, industrial controllers, digital cameras, voice recording equipment, embedded computing systems, communication devices and other electronic products requiring high-density NAND flash memory.

Quality & Sourcing

Antrex Electronics can support TC58NVG0S3ETA00 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, customers can provide quantity requirements, delivery schedules, application details and technical specifications for faster quotation support.

For quality assurance, Antrex Electronics can assist with product photos, marking verification, visual inspection and third-party testing services when required. OEM manufacturers, embedded system developers, industrial equipment suppliers and electronic component buyers are welcome to submit BOM lists or hard-to-find memory component requirements for sourcing assistance.

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