TC58NVG0S3ETA00
TC58NVG0S3ETA00 is a Toshiba 1Gb SLC NAND Flash memory IC with 128M x 8-bit organization, designed for high-density non-volatile storage applications
- 製品カテゴリ
- メモリ IC
- パッケージ
- TSSOP48
- 在庫
- 1,500 pcs
- 供給状況
- 現在の数量は確認が必要です。
製品属性
| メーカー | Toshiba Semiconductor and Storage |
|---|---|
| 製品カテゴリ | メモリ IC |
| Applications | Embedded Systems, Industrial Equipment, Data Storage, Consumer Electronics |
| Block Erase Time | 2.5ms Typical |
| Block Size | 128KB + 4KB |
| Features | High Reliability, Fast Read/Write Operation, Non-Volatile Data Retention |
| Interface Type | Serial NAND Interface |
| Memory Density | 1 Gbit |
| Memory Organization | 128M x 8-bit |
| Memory Type | SLC NAND Flash EEPROM |
| Number of Valid Blocks | 1004 to 1024 Blocks |
| Operating Current | 30mA Maximum |
| Operating Temperature | 0°C to +70°C |
| Operating Voltage | 3.3V Typical |
| Package Size | 12mm x 20mm |
| Package Type | TSOP-I 48-Pin |
| Page Size | 2112 Bytes (2048 + 64 Bytes) |
| Part Number | TC58NVG0S3ETA00 |
| Pin Count | 48 Pins |
| Program Time | 300µs Typical per Page |
| Read Cycle Time | 25ns Minimum |
| Standby Current | 50µA Maximum |
| Supply Voltage | 2.7V to 3.6V |
| Technology | CMOS Silicon Gate Process |
| データシート | データシートを依頼 |
調達概要
TC58NVG0S3ETA00 の主要な供給・購買情報です。
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TC58NVG0S3ETA00 の詳細説明
Product Overview
TC58NVG0S3ETA00 is a Toshiba 1Gbit SLC NAND Flash Memory device designed for high-density non-volatile data storage applications. Featuring a 1Gb (128M × 8 bit) NAND EEPROM architecture, 3.3V power supply operation, serial I/O interface and TSOP-I 48-pin package, this device provides reliable data retention, fast access performance and low power consumption. It is suitable for embedded storage systems, industrial equipment, digital imaging devices, voice recorders and other applications requiring stable flash memory storage.
Key Features
Manufacturer: Toshiba
Part Number: TC58NVG0S3ETA00
Product Type: SLC NAND Flash Memory
Memory Density: 1Gbit
Memory Organization: 128M × 8 bit
Memory Technology: Single-Level Cell (SLC) NAND EEPROM
Supply Voltage: 2.7V to 3.6V
Operating Voltage: 3.3V typical
Interface Type: Serial NAND interface
Data Bus Width: 8-bit I/O
Page Size: 2112 bytes (2048 + 64 bytes spare area)
Block Size: 128K bytes + 4K bytes spare area
Access Time: 25μs max. cell array to register
Program Time: 300μs/page typical
Erase Time: 2.5ms/block typical
Operating Current: 30mA max.
Standby Current: 50μA max.
Package Type: TSOP-I 48-pin package
Package Size: 12mm × 20mm, 0.5mm pitch
Operating Temperature Range: 0°C to +70°C
Features: High reliability, fast data transfer, low power consumption and compact storage design
Datasheet: TC58NVG0S3ETA00 datasheet PDF available for technical verification before production use.
Applications
TC58NVG0S3ETA00 is designed for embedded systems requiring reliable non-volatile memory storage. Typical applications include solid-state storage devices, industrial controllers, digital cameras, voice recording equipment, embedded computing systems, communication devices and other electronic products requiring high-density NAND flash memory.
Quality & Sourcing
Antrex Electronics can support TC58NVG0S3ETA00 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, customers can provide quantity requirements, delivery schedules, application details and technical specifications for faster quotation support.
For quality assurance, Antrex Electronics can assist with product photos, marking verification, visual inspection and third-party testing services when required. OEM manufacturers, embedded system developers, industrial equipment suppliers and electronic component buyers are welcome to submit BOM lists or hard-to-find memory component requirements for sourcing assistance.
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