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料號

MIG50Q6CSB1X

1200V, 50A 6-in-1 intelligent IGBT power module with integrated drive and protection circuits

產品分類
IGBT模組
封裝
MODULE
庫存
500 件
供貨狀態
當前數量需確認。
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產品屬性

製造商 Toshiba Semiconductor and Storage
產品分類 IGBT模組
Circuit Configuration 6-in-1 Three-Phase Inverter
Collector Current 50 A
Collector Power Dissipation 580 W
Collector-emitter voltage 1200 V
Control Supply Voltage 20 V Max
DC Bus Supply Voltage 900 V Max
Diode Forward Voltage 2.4 V Typical
Fault Output Current 14 mA
Fault Output Voltage 20 V Max
Forward Current 50 A
Isolation Voltage 2500 VAC for 1 Minute
Maximum Diode Forward Voltage 2.8 V
Maximum Junction Temperature +150°C
Maximum VCE(sat) 2.6 V at 25°C
Operating Temperature Range -20°C to +100°C
Product Type Intelligent Power Module
Semiconductor Type Silicon N-Channel IGBT
Storage Temperature Range -40°C to +125°C
Typical VCE(sat) 2.2 V
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料號 MIG50Q6CSB1X
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MIG50Q6CSB1X 詳細描述

Product Overview

MIG50Q6CSB1X is a Toshiba 1200V, 50A Intelligent Power Module based on silicon N-channel IGBT technology for high-power switching and motor-control applications. The module integrates a six-switch three-phase inverter stage together with gate-drive and protection circuitry, including overcurrent, short-circuit, undervoltage and overtemperature protection. With low saturation voltage, high-speed switching, electrical isolation from the case and a compact power-module structure, MIG50Q6CSB1X is well suited for industrial inverters, AC motor drives, servo systems, UPS equipment and other high-power conversion systems.

Key Features

  • Manufacturer: Toshiba

  • Part Number: MIG50Q6CSB1X

  • Product Family: Toshiba Compact Intelligent Power Module

  • Device Type: Intelligent Power Module

  • Semiconductor Technology: Silicon N-channel IGBT

  • Power Circuit Configuration: Six-switch three-phase inverter

  • Number of Power Units: 6

  • Collector-Emitter Voltage Rating: 1200V

  • Collector Current Rating: 50A

  • Maximum Collector-Emitter Saturation Voltage: 2.6V at 50A and 25°C

  • Integrated Gate Drivers: Yes

  • Integrated Control Circuitry: Yes

  • Overcurrent Protection: Integrated

  • Short-Circuit Protection: Integrated

  • Gate-Drive Undervoltage Protection: Integrated

  • Overtemperature Protection: Integrated

  • Brake Circuit: Not integrated

  • Switching Characteristic: High-speed IGBT switching

  • Power-Loss Characteristic: Low saturation voltage for reduced conduction loss

  • Thermal Performance: Low thermal resistance construction

  • Case Isolation: Power electrodes electrically isolated from the case

  • Module Structure: Compact insulated power module

  • Input Control: Low-power logic-level control through integrated drive circuitry

  • Output Stage: Three-phase IGBT inverter bridge

  • Freewheeling Diodes: Integrated with inverter switching elements

  • Fault Protection Function: Automatic shutdown during abnormal current or temperature conditions

  • Typical DC Bus Application: High-voltage industrial inverter systems

  • Typical Use: AC motor drives

  • Typical Use: Servo motor controllers

  • Typical Use: Industrial inverter equipment

  • Typical Use: Uninterruptible power supplies

  • Typical Use: High-power switching systems

  • Typical Use: Industrial machinery and automation

  • Mounting Type: Chassis / heatsink-mounted power module

  • Cooling Requirement: External heatsink required for high-power operation

  • Insulation Advantage: Simplifies mounting to grounded cooling structures

  • Key Feature: Integrated inverter and protection circuitry in one package

  • Key Feature: 1200V / 50A power rating

  • Key Feature: Built-in overcurrent, short-circuit, undervoltage and overtemperature protection

  • Product Generation: Legacy Toshiba IPM

  • Product Lifecycle: Legacy / discontinued device

  • Replacement Consideration: 1200V blocking voltage, 50A current rating, six-switch inverter topology, protection functions, mechanical dimensions, terminal layout and thermal characteristics must be verified.

  • Ordering / Packaging Note: Buyers should verify the exact MIG50Q6CSB1X Toshiba marking, module outline, terminal configuration, lot/date code, isolation condition and heatsink requirements before production or replacement use.

Applications

MIG50Q6CSB1X can be used in high-power three-phase inverter systems requiring an integrated 1200V IGBT bridge with built-in gate driving and protection functions. Typical applications include industrial AC motor drives, servo amplifiers, variable-frequency drives, UPS systems, factory automation equipment, pumps, compressors and other high-power switching systems. Its integrated protection circuits help simplify inverter design while providing safeguards against overcurrent, short-circuit, undervoltage and excessive temperature conditions.

Quality & Sourcing

Antrex Electronics can support MIG50Q6CSB1X sourcing with stock availability checks, RFQ quotation, module-outline confirmation, terminal-layout verification, date code review and shipment arrangement. Because this Toshiba IPM is a legacy power module, buyers are encouraged to provide required quantity, acceptable date code, target price, equipment model and heatsink or mounting information when sourcing parts for maintenance or replacement projects.

For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection, terminal-condition checks, insulation verification and third-party electrical testing support when required. OEMs, EMS providers, industrial drive manufacturers, automation companies, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find power module requests for sourcing assistance.

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