GT30J122A
600V 30A N-channel IGBT for soft switching and resonant inverter applications
- 產品分類
- IGBT模組
- 封裝
- TO-3P
- 庫存
- 500 件
- 供貨狀態
- 當前數量需確認。
產品屬性
| 製造商 | Toshiba Semiconductor and Storage |
|---|---|
| 產品分類 | IGBT模組 |
| Applications | Current Resonant Inverters, Partial Switching PFC, Power Supplies |
| Collector Current (IC) | 30A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.7V Typical |
| Collector-Emitter Voltage (VCES) | 600V |
| Compliance | ROHS compliant |
| Configuration | Single IGBT |
| Device Type | N-Channel IGBT |
| Diode Configuration | No Built-in Diode |
| Gate-Emitter Voltage (VGES) | ±20V |
| Mounting Type | Through Hole |
| Number of Pins | 3 Pins |
| Operating Temperature | -55°C to +150°C |
| Package Type | TO-3P(N) |
| Part Number | GT30J122A |
| Pulsed Collector Current (ICP) | 90A |
| Switching Speed | High-speed switching |
| Technology | 4th Generation IGBT |
| Turn-Off Time (tf) | 0.20μs Typical |
| 資料表 | 索取數據表 |
採購概覽
GT30J122A 的主要供貨及採購資訊。
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GT30J122A 詳細描述
Product Overview
GT30J122A is based on Toshiba's GT30J122A silicon N-channel IGBT designed specifically for soft-switching power applications. Featuring a 600V collector-emitter voltage rating, 30A continuous collector current, low 1.7V typical saturation voltage and fast switching performance, the device is optimized for current-resonant inverter and partial-switching PFC circuits. Its TO-3P(N) through-hole package provides reliable thermal and electrical performance for appliance and industrial power conversion systems.
Key Features
Manufacturer: Toshiba Electronic Devices & Storage
Part Number: GT30J122A
Base Part Number: GT30J122A
Product Type: Discrete IGBT
Transistor Type: Silicon N-Channel IGBT
IGBT Generation: 4th Generation
Operating Mode: Enhancement Mode
Number of Circuits: 1
Collector-Emitter Voltage (VCES): 600V
Continuous Collector Current (IC): 30A
Collector Current Class: 30A
Typical Collector-Emitter Saturation Voltage: 1.7V at IC = 50A
Typical Fall Time (tf): 0.20µs at IC = 50A
Switching Characteristic: High-Speed Soft Switching
Built-In Diode: No
Primary Application: Current-Resonant Inverter Switching
Secondary Application: Partial-Switching Power Factor Correction
Package Type: TO-3P(N)
JEITA Package: SC-65
Pin Count: 3
Pin 1: Gate
Pin 2: Collector
Pin 3: Emitter
Mounting Type: Through-Hole
Package Dimensions: 15.5mm × 20.0mm × 4.5mm
Key Feature: Low Saturation Voltage
Commercial Production Start: June 2010
RoHS Status: RoHS-Compatible Versions Available
Product Status: Full Production
Recommended New-Design Product: GT30J65MRB
Ordering Note: Buyers should confirm the exact GT30J122A suffix or marking, electrical characteristics, package requirements and the latest Toshiba datasheet before production use.
Applications
GT30J122A_1 is intended primarily for current-resonant inverter switching and partial-switching power factor correction applications. Typical uses include air-conditioning power stages, resonant power converters, appliance inverter circuits, switching power supplies and other systems requiring efficient 600V soft-switching performance.
Quality & Sourcing
Antrex Electronics can support GT30J122A sourcing with stock availability checks, RFQ quotation, package and suffix confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required delivery date, packaging requirements and application details for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label verification, visual inspection and third-party testing support when required. Appliance manufacturers, inverter manufacturers, power supply companies, repair centers and electronic component buyers are welcome to submit BOM lists or hard-to-find IGBT requirements for sourcing assistance.
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