CY62137FV30LL-55ZSXE

Product Overview

The CY62137FV30LL-55ZSXE from Cypress Semiconductor Corp is a volatile SRAM memory IC with a 2Mbit capacity and a 128K x 16 organization. It uses an asynchronous parallel interface and is supplied in a surface-mount 44-TSOP II package with a 10.16 mm body width. The device operates from a 2.2 V to 3.6 V supply and supports an ambient temperature range of -40 °C to 125 °C. Its 55 ns access time and 55 ns word/page write cycle time define the timing envelope for random-access data storage in embedded memory subsystems.

Key Features

• 2Mbit volatile SRAM memory organized as 128K x 16.
• Asynchronous parallel memory interface for random-access data operations.
• 55 ns access time and 55 ns word/page write cycle time.
• 2.2 V to 3.6 V supply voltage range.
• -40 °C to 125 °C ambient operating temperature range.
• Surface-mount 44-TSOP II package, 10.16 mm width.

Applications

• Embedded controller systems that require local volatile data storage with parallel random access.
• Processor or FPGA platforms that expand addressable memory through a parallel interface.
• Equipment designs that buffer temporary data with 55 ns access timing.

Design & Procurement Notes

Designers should confirm that the system power supply remains within 2.2 V to 3.6 V and that the PCB layout provides adequate signal integrity for the parallel interface paths. The 55 ns access time and 55 ns word/page write cycle time should be compared with the controller timing budget. Because the memory is volatile, data retention depends on maintaining supply voltage. The 44-TSOP II surface-mount footprint and 10.16 mm width require matching pad and land patterns, and the -40 °C to 125 °C ambient range should be checked against the expected thermal environment.