3N187
3N187 is a silicon dual-gate N-channel MOSFET designed for RF amplifier, mixer, and communication applications up to 300 MHz
Quick Answer: 3N187 is a high-performance N-channel JFET (Junction Field Effect Transistor) designed for low-noise and high-input impedance applications.
- Manufacturer
- Mitsubishi Electric
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-59
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Mitsubishi Electric |
|---|---|
| Product Category | Bipolar Transistors - BJT |
| Application | RF Amplifier, Mixer, IF Amplifier |
| Channel Mode | Depletion Mode |
| Drain Current (IDSS) | 5mA Typical |
| Drain-Source Voltage (VDS) | 20V |
| Forward Transconductance (gfs) | 12,000 µmho Typical |
| Frequency Range | Up to 300 MHz |
| Gate Protection | Integrated Gate Protection Diodes |
| Input Capacitance | 8.5 pF Typical |
| Manufacturer | Motorola / RCA / NJ Semiconductor |
| Mounting Style | Through Hole |
| Noise Figure | 3.5 dB Typical at 200 MHz |
| Number of Gates | Dual Gate |
| Operating Temperature Range | -65°C to +175°C |
| Package Type | TO-18 / TO-72 Metal Can |
| Power Gain | 18 dB Typical at 200 MHz |
| RoHS Compliance | Not Specified |
| Technology | Silicon Insulated-Gate Field-Effect Transistor |
| Transistor Type | N-Channel Depletion MOSFET |
| Datasheet | Request Datasheet |
Procurement Snapshot
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Detailed Description for 3N187
Product Overview
3N187 is a high-performance N-channel JFET (Junction Field Effect Transistor) designed for low-noise and high-input impedance applications. It provides excellent signal amplification characteristics, low leakage current and stable electrical performance, making it suitable for audio equipment, instrumentation circuits, communication systems and precision analog applications.
Key Features
Part Number: 3N187
Device Type: N-Channel Junction Field Effect Transistor (JFET)
Channel Type: N-Channel
Technology: Silicon JFET
High Input Impedance Characteristics
Low Noise Signal Operation
Low Gate Leakage Current
High Gain Performance
Low Power Consumption
Excellent Thermal Stability
Drain-Source Voltage: High voltage capability
Drain Current: Suitable for small-signal amplification
Package Type: Through-hole transistor package
Mounting Type: Through-hole mounting
Operating Mode: Depletion mode
Application Type: Analog signal amplification
Suitable for Precision Circuit Designs
Reliable Performance in Low-Level Signal Processing
Replacement Component for Legacy Electronic Equipment
Quality Support: Sourcing, inspection and BOM assistance available
Applications
3N187 is commonly used in low-noise amplifier circuits, audio equipment, test and measurement instruments, communication devices, sensor interfaces, analog switching circuits and other electronic systems requiring high impedance and low-noise signal processing.
Quality & Sourcing
Antrex Electronics provides sourcing support for 3N187, including availability checking, quotation, package verification, quality inspection and shipment arrangement. Customers can provide BOM lists, quantities and project requirements for professional electronic component sourcing services.
Datasheet
3N187 datasheet PDF is available through manufacturer archives and authorized distributor resources. Please contact Antrex Electronics for datasheet confirmation, stock availability and sourcing support.
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