MT47H64M16NF-25E IT:M TR
IC DRAM 1GBIT PARALLEL 84FBGA
- Manufacturer
- Micron Technology Inc.
- Product Category
- Memory ICs
- Package
- 84-TFBGA
- Stock
- 1,975 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Micron Technology Inc. |
|---|---|
| Product Category | Memory ICs |
| Access Time | 400 ps |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 64M x 16 |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Product status | Active |
| Supplier Device Package | 84-FBGA (8x12.5) |
| Technology | SDRAM - DDR2 |
| Voltage - Supply | 1.7V ~ 1.9V |
| Write Cycle Time - Word, Page | 15ns |
| Datasheet | Request Datasheet |
Procurement Snapshot
Key supply and purchasing information for MT47H64M16NF-25E IT:M TR.
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Detailed Description for MT47H64M16NF-25E IT:M TR
Product Overview
The MT47H64M16NF-25E IT:M TR from Micron Technology Inc. is a volatile DDR2 SDRAM integrated circuit that provides 1Gbit of DRAM in a 64M x 16 organization. It uses a parallel memory interface, operates at a 400 MHz clock frequency, and specifies a 400 ps access time with a 15ns word/page write cycle time. The device requires a 1.7V to 1.9V supply and is intended for surface-mount assembly in an 84-TFBGA package with an 84-FBGA (8x12.5) package outline. Its rated operating temperature range is -40°C to 85°C (TA).
Key Features
- 1Gbit DDR2 SDRAM memory capacity with a 64M x 16 organization.
- Parallel memory interface for volatile DRAM operation.
- 400 MHz clock frequency with 400 ps access time.
- 15ns word/page write cycle time.
- 1.7V to 1.9V supply voltage range.
- Operating temperature range of -40°C to 85°C (TA).
- Surface-mount 84-TFBGA package with an 84-FBGA (8x12.5) package outline.
Applications
- Embedded systems that require a volatile parallel DRAM array for temporary data storage or memory subsystem implementation.
- Networking and communication equipment using DDR2 memory subsystems for system data handling.
- Industrial control hardware that needs operation from -40°C to 85°C (TA) in a surface-mount package.
- Consumer and commercial electronics designs with a 1.7V to 1.9V DDR2 memory interface.
Design & Procurement Notes
Designers should confirm that the host memory controller, clock generation, and power delivery support a parallel DDR2 interface at 400 MHz with a 1.7V to 1.9V supply. Board layout and assembly should accommodate the 84-TFBGA package and the 84-FBGA (8x12.5) package outline, including land pattern, solder paste, and reflow considerations. The 400 ps access time and 15ns word/page write cycle time should be checked against the system timing budget, while the -40°C to 85°C (TA) range should be considered in thermal design and enclosure placement. The 1Gbit 64M x 16 organization and volatile DRAM format should be matched to the intended memory architecture rather than treated as a substitute for nonvolatile or serial memory functions.
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