FZ800R12KE3
single-switch IGBT power module rated at 1200V / 800A
- Manufacturer
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- Module
- Stock
- 365 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Infineon Technologies |
|---|---|
| Product Category | IGBT Modules |
| Approval | UL Approved |
| Collector-Emitter Saturation Voltage | 1.70V typ / 2.15V max |
| Collector-Emitter Voltage, VCES | 1200V |
| Configuration | Single Switch |
| Diode Forward Current | 800A |
| Diode Forward Voltage | 1.90V typ / 2.75V max |
| Diode Peak Forward Current | 1600A |
| Diode Reverse Voltage, VRRM | 1200V |
| Diode Type | Emitter Controlled 3 Diode |
| Gate Charge | 7.40µC typ |
| Gate Threshold Voltage | 5.0V min / 5.8V typ / 6.5V max |
| Gate-Emitter Voltage, VGES | ±20V |
| Input Capacitance | 56.0nF typ |
| Internal Gate Resistor | 0.94Ω typ |
| Internal Isolation | Al₂O₃ |
| Isolation Test Voltage | 4.0kV AC, 1 min |
| Module Baseplate | Copper |
| Mounting Torque | M6 screw, 3–6Nm |
| Nominal Collector Current, IC nom | 800A |
| Operating Junction Temperature | -40°C to +125°C |
| Product status | Obsolete / no longer manufactured |
| Product Type | IGBT Power Module |
| Repetitive Peak Collector Current, ICRM | 1600A |
| Reverse Transfer Capacitance | 2.30nF typ |
| Series / Housing | 62mm C-Series Module |
| Storage Temperature | -40°C to +125°C |
| Stray Inductance | 16nH typ |
| Technology | Trench / Fieldstop IGBT3 |
| Terminal Torque | M4: 1.1–2.0Nm / M6: 2.5–5.0Nm |
| Thermal Resistance, Diode Junction-to-Case | 0.06 K/W |
| Thermal Resistance, IGBT Junction-to-Case | 0.035 K/W |
| Total Power Dissipation | 3550W |
| Weight | 340g |
| Datasheet | Request Datasheet |
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