CY62167EV18LL-55BVI

Product Overview

The CY62167EV18LL-55BVI from Cypress Semiconductor Corp is an asynchronous SRAM memory IC with a 16 Mbit capacity organized as 1 M x 16. It uses a parallel memory interface and is specified with a 55 ns access time and 55 ns write cycle time for word and page operations. The device operates from a 1.65 V to 2.25 V supply and is supplied in a 48-VFBGA (6 x 8) surface-mount package. Its volatile SRAM structure is intended for temporary data storage and retrieval in systems that require a parallel memory bus.

Key Features

• 16 Mbit SRAM capacity with 1 M x 16 organization
• Asynchronous memory technology with a parallel interface
• 55 ns access time and 55 ns write cycle time for word and page operations
• Supply voltage range of 1.65 V to 2.25 V
• Operating temperature range of -40°C to 85°C (TA)
• 48-VFBGA (6 x 8) surface-mount package
• Volatile memory format for temporary data retention

Applications

• Embedded systems that use a parallel SRAM bus for temporary data storage
• Low-voltage logic systems requiring 1.65 V to 2.25 V memory operation
• Microprocessor and controller systems needing 16-bit wide memory organization
• Buffering or staging data in systems with 55 ns memory timing requirements
• Surface-mount designs using a 48-VFBGA footprint

Design & Procurement Notes

When selecting this device, confirm that the host controller supports a 16-bit parallel SRAM interface, 55 ns timing, and a supply range compatible with 1.65 V to 2.25 V. The 1 M x 16 organization determines address and data line usage, so memory mapping and bus width should be checked before layout. The 48-VFBGA (6 x 8) package requires a surface-mount assembly process and footprint verification. The -40°C to 85°C operating range should be matched to the expected ambient temperature conditions.