CY62167EV30LL-45BVXI

Product Overview

The CY62167EV30LL-45BVXI from Infineon Technologies is an asynchronous SRAM memory IC with 16 Mbit capacity. It belongs to the MOBL series and uses a parallel memory interface. The device uses a 48-VFBGA (6x8) surface-mount package and operates from a supply voltage range of 2.2 V to 3.6 V. The memory organization is 2M x 8 or 1M x 16, with a 45 ns access time and 45 ns write cycle time for word and page operations.

Key Features

• Asynchronous SRAM memory IC with 16 Mbit capacity and a parallel interface.
• Memory organization is 2M x 8 or 1M x 16.
• 45 ns access time and 45 ns write cycle time for word and page operations.
• Supply voltage range is 2.2 V to 3.6 V, with an operating temperature range of -40°C to 85°C TA.
• Surface-mount 48-VFBGA (6x8) package.

Applications

• Embedded systems that require a parallel SRAM interface for local data storage.
• Data acquisition and buffering subsystems that use volatile memory for temporary data retention.
• Communications and networking equipment where asynchronous SRAM can serve as a memory expansion.
• Instrumentation and control systems that operate within a 2.2 V to 3.6 V supply range.

Design & Procurement Notes

Design considerations include matching the host bus to the parallel interface and to the 45 ns access and write cycle timing. The supply voltage must remain within 2.2 V to 3.6 V, and the operating temperature range is -40°C to 85°C TA. The 48-VFBGA (6x8) surface-mount package requires appropriate land pattern and soldering considerations. Because the memory is volatile, system design should account for data retention behavior during power-off conditions. When selecting the part, verify that the 16 Mbit capacity and 2M x 8 or 1M x 16 organization fit the intended memory architecture.