23N60E
600V 23A N-channel power MOSFET for high-efficiency switching and inverter applications
- 製品カテゴリ
- MOSFET
- パッケージ
- TO-3P
- 在庫
- 1,500 pcs
- 供給状況
- 現在の数量は確認が必要です。
製品属性
| メーカー | Fuji Electric Co., Ltd. |
|---|---|
| 製品カテゴリ | MOSFET |
| Application | Switching Power Supplies |
| Avalanche Capability | High Avalanche Energy |
| Channel Type | N-Channel |
| Continuous Drain Current | 23A |
| Drain-Source On-Resistance | 0.28Ω Max |
| Drain-Source voltage | 600V |
| Gate Charge | low gate charge design |
| Gate-Source voltage | ±30V |
| Input Capacitance | Low Input Capacitance |
| MOSFET Mode | Enhancement Mode |
| Mounting Type | Through Hole |
| Operating Junction Temperature | Up to +150°C |
| Package Type | TO-3P / TO-3PF |
| Power Dissipation | 200W |
| Product Type | Power MOSFET |
| Switching Type | High-speed switching |
| Technology | Silicon Power MOSFET |
| データシート | データシート PDF を表示 |
調達概要
23N60E の主要な供給・購買情報です。
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23N60E の詳細説明
Product Overview
23N60E is commonly associated with the STMicroelectronics STP23N60E, a 600V N-channel power MOSFET designed for high-voltage switching applications. Based on ST's MDmesh™ technology, the device combines low drain-source on-resistance with high current capability, low gate charge and reliable avalanche performance. With a continuous drain current rating up to 23A and a TO-220 power package, STP23N60E is suitable for switch-mode power supplies, power factor correction stages, industrial converters, lighting systems and other applications requiring efficient 600V-class power switching.
Key Features
Manufacturer: STMicroelectronics
Part Number: STP23N60E / 23N60E
Product Type: N-Channel Power MOSFET
Technology: MDmesh™ Power MOSFET
Transistor Polarity: N-Channel
Drain-Source Voltage (VDSS): 600V
Continuous Drain Current (ID): 23A at TC = 25°C
Continuous Drain Current (ID): 14.5A at TC = 100°C
Pulsed Drain Current (IDM): 92A
Gate-Source Voltage (VGS): ±25V
Drain-Source On-Resistance (RDS(on)): Approximately 0.17Ω Maximum
Gate Threshold Voltage (VGS(th)): 3V to 5V
Maximum Power Dissipation: Approximately 190W
Single-Pulse Avalanche Energy: High Avalanche Capability
Gate Charge: Optimized for High-Speed Switching
Switching Characteristic: Fast Switching Performance
Intrinsic Diode: Integrated Body Diode
Maximum Operating Junction Temperature: +150°C
Storage Temperature Range: -55°C to +150°C
Package Type: TO-220
Mounting Type: Through Hole
Pin Configuration: Gate, Drain, Source
Key Characteristics: Low RDS(on), Low Gate Charge and High Avalanche Ruggedness
Typical Applications: SMPS, PFC Circuits, Industrial Power Supplies and High-Voltage Converters
Compliance: Lead-Free / RoHS Compliant
Applications
STP23N60E is intended for high-voltage switching circuits requiring low conduction losses and efficient switching performance. Typical applications include switch-mode power supplies, active power factor correction stages, industrial power converters, telecom and server power supplies, electronic lighting systems, inverter circuits and other 600V-class power electronics.
Quality & Sourcing
Antrex Electronics can support 23N60E / STP23N60E sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. Buyers should confirm the complete STMicroelectronics ordering number and TO-220 package configuration when requesting this device, as abbreviated top markings may also appear on related MOSFET variants.
For quality control, Antrex Electronics can help arrange product photos, marking verification, visual inspection, packaging confirmation and third-party testing support when required. OEMs, EMS providers, power supply manufacturers and industrial equipment companies are welcome to send BOM lists or power MOSFET requirements for sourcing assistance.
Datasheet PDF: STP23N60E Datasheet
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