TK30A06J3A

Product Overview

TK30A06J3A is a Toshiba U-MOSIII N-channel power MOSFET designed for switching regulator and general-purpose power conversion applications. The device combines a 60V drain-source rating, 30A continuous drain current and low 19mΩ typical on-resistance in a TO-220SIS through-hole package. Its low conduction loss, strong current capability and enhancement-mode operation make it suitable for DC-DC converters, switching power supplies and industrial power control circuits.

Key Features

• Manufacturer: Toshiba Electronic Devices & Storage

• Part Number: TK30A06J3A

• Product Type: Power MOSFET

• MOSFET Type: N-Channel

• Technology: U-MOSIII

• Configuration: Single MOSFET

• Drain-Source Voltage: 60V

• Drain-Gate Voltage: 60V

• Continuous Drain Current: 30A

• Pulsed Drain Current: 90A

• Gate-Source Voltage: ±20V

• Typical Drain-Source On-Resistance: 19mΩ

• Maximum Drain-Source On-Resistance at VGS = 10V: 26mΩ

• Maximum Drain-Source On-Resistance at VGS = 4.5V: 35mΩ

• Gate Threshold Voltage: 1.3V to 2.5V

• Typical Forward Transfer Admittance: 34S

• Maximum Drain Leakage Current: 10µA at 60V

• Typical Input Capacitance: 1950pF

• Typical Reverse Transfer Capacitance: 140pF

• Typical Output Capacitance: 230pF

• Typical Total Gate Charge: 36nC

• Single-Pulse Avalanche Energy: 40mJ

• Avalanche Current: 30A

• Repetitive Avalanche Energy: 2.5mJ

• Maximum Power Dissipation at TC = 25°C: 25W

• Maximum Channel Temperature: +150°C

• Storage Temperature Range: -55°C to +150°C

• Package Type: TO-220SIS

• Toshiba Package Code: 2-10U1B

• Pin Configuration: Gate, Drain, Source

• Mounting Type: Through-Hole

• Typical Package Weight: 1.7g

• Primary Application: Switching Regulators

Applications

TK30A06J3A is suitable for switching regulators, DC-DC converters, low-voltage switching power supplies, motor and solenoid control circuits, industrial power electronics and other applications requiring a low-resistance 60V N-channel MOSFET with high current capability.

Design & Selection Considerations

Designers using TK30A06J3A should verify drain-current requirements, MOSFET conduction losses, gate-drive voltage, switching frequency and thermal conditions under the intended load. The device provides approximately 19mΩ typical RDS(on), while Toshiba specifies up to 26mΩ at a 10V gate drive and 35mΩ at 4.5V, allowing operation with relatively low gate-drive levels. Adequate heatsinking and PCB current-path design are important when operating near the 30A current rating, and avalanche energy limits should be considered in inductive switching applications.

Quality & Sourcing

Antrex Electronics can support TK30A06J3A sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, customers can provide quantity requirements, delivery schedules, required Toshiba suffix information and power application details for faster quotation support.

For quality assurance, Antrex Electronics can assist with product photos, marking verification, visual inspection and third-party testing services when required. Power-supply manufacturers, industrial electronics companies, EMS providers and electronic component buyers are welcome to submit BOM lists or hard-to-find Toshiba MOSFET requirements for sourcing assistance.