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SKM200GBD123D

SEMIKRON SKM200GBD123D is a high-power 1200V 200A IGBT module with integrated fast recovery inverse diode, designed for industrial switching, motor drives, and power conversion applications

製造商
SEMIKRON
產品分類
IGBT模組
封裝
MODULE
庫存
150 件
供貨狀態
當前數量需確認。
詢價內容包括: 價格 庫存確認 生產批次 交期
可按要求提供產品實拍及檢測支援。

產品屬性

製造商 SEMIKRON
產品分類 IGBT模組
Applications Motor Drives, Inverters, UPS Systems, Industrial Power Supplies
Baseplate Material Isolated Copper Baseplate
Collector Current (IC) 200 A
Collector-Emitter Saturation Voltage (VCE(sat)) Approx. 2.4 V
Collector-Emitter Voltage (VCES) 1200 V
Configuration Dual IGBT Module with Freewheeling Diodes
Diode Forward Current (IF) 200 A
Diode Type Fast Recovery CAL Diode
Gate-Emitter Voltage (VGES) ±20 V
Isolation Voltage 2500 V AC
Mounting Type Screw Mount
Operating Junction Temperature -40°C to +150°C
Package Type SEMITRANS 3 (Case D56)
Peak Collector Current (ICM) 400 A
Product Type IGBT Power Module
Reverse Voltage (VRRM) 1200 V
RoHS Status Compliant
Switching Frequency High-Speed Switching Capability
Technology N-channel IGBT with anti-parallel diode
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採購資訊

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料號 SKM200GBD123D
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SKM200GBD123D 詳細描述

Product Overview

SKM200GBD123D is a SEMIKRON SEMITRANS 3 IGBT power module designed for high-power switching and industrial energy conversion applications. Featuring a 1200V collector-emitter voltage rating, 200A current capability, half-bridge configuration and integrated fast & soft CAL freewheeling diodes, this module provides low inductance design, high switching reliability and excellent thermal performance. It is widely used in motor drives, industrial inverters, UPS systems and power conversion equipment. 

Key Features

  • Manufacturer: SEMIKRON Danfoss

  • Part Number: SKM200GBD123D

  • Product Type: IGBT Power Module

  • Series: SEMITRANS 3

  • Technology: N-channel IGBT with anti-parallel diode

  • Configuration: Half-Bridge IGBT Module

  • Collector-Emitter Voltage (VCES): 1200V

  • Collector Current (IC): 200A

  • Pulsed Collector Current (ICM): 400A

  • Collector-Emitter Saturation Voltage (VCE(sat)): Approx. 3V

  • Gate-Emitter Voltage (VGES): ±20V

  • Power Dissipation: 1380W

  • Diode Technology: Fast and soft inverse CAL diode

  • Package Type: SEMITRANS 3 Case D

  • Mounting Type: Panel mounting with screw terminals

  • Insulation Technology: Isolated copper baseplate with DCB technology

  • Isolation Voltage: 2500V AC (1 minute)

  • Operating Junction Temperature: -40°C to +150°C

  • Features: Low inductance case, high short-circuit capability and reliable switching performance

  • Typical Applications: Motor drives, inverters, UPS systems, welding equipment and industrial converters

  • Datasheet: SKM200GBD123D datasheet PDF available for technical verification before production use. 

Applications

SKM200GBD123D is designed for high-power switching systems requiring reliable IGBT performance, efficient heat dissipation and robust electrical isolation. Typical applications include industrial motor controllers, variable frequency drives (VFD), UPS equipment, welding machines, renewable energy converters, power supplies and other industrial power electronics platforms. 

Quality & Sourcing

Antrex Electronics can support SKM200GBD123D sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, customers can provide quantity requirements, delivery schedules, application details and technical specifications for faster quotation support.

For quality assurance, Antrex Electronics can assist with product photos, marking verification, visual inspection and third-party testing services when required. OEM manufacturers, industrial equipment suppliers, repair centers and electronic component buyers are welcome to submit BOM lists or hard-to-find power semiconductor requirements for sourcing assistance.

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