S34MS02G100BHI003

Product Overview

The Cypress Semiconductor Corp S34MS02G100BHI003 is a non-volatile NAND FLASH memory IC with a 2Gbit density and a 256M x 8 memory organization. It uses a parallel memory interface, provides 45 ns access time, and specifies a 45 ns word/page write cycle time. The device operates from a 1.7V to 1.95V supply over an ambient temperature range of -40°C to 85°C. It uses a surface-mount 63-VFBGA package with an 11x9 outline. The device is part of the MS-1 series.

Key Features

• 2Gbit non-volatile NAND FLASH memory with 256M x 8 organization
• Parallel memory interface supporting 45 ns access time
• 45 ns word/page write cycle time
• 1.7V to 1.95V supply voltage range
• Surface-mount 63-VFBGA package with 11x9 body outline
• Operating ambient temperature range of -40°C to 85°C
• MS-1 series NAND FLASH memory device
• Non-volatile memory format with FLASH - NAND technology

Applications

• Embedded systems requiring non-volatile NAND flash storage
• Host controllers using a parallel memory interface and 2Gbit density
• Low-voltage electronic assemblies operating from a 1.7V to 1.95V supply
• Compact electronic assemblies requiring surface-mount memory

Design & Procurement Notes

Designers should verify that the host controller supports parallel NAND FLASH access, the 256M x 8 organization, and the 45 ns timing characteristics before interface integration. The 1.7V to 1.95V supply range requires a compatible low-voltage rail. The 63-VFBGA surface-mount package with 11x9 outline requires footprint and layout validation. The -40°C to 85°C ambient operating range should be checked against the expected environmental conditions. Procurement should confirm that the 63-VFBGA package and 11x9 outline match the board layout.