K1358

Product Overview

K1358 is a Toshiba 2SK1358 silicon N-channel power MOSFET designed for high-voltage, high-speed switching applications. The device provides a 900V drain-source voltage rating, 9A continuous drain current and approximately 1.1Ω typical on-resistance in a rugged SC-65 / TO-3P-class package. With low leakage current, high forward transfer admittance and enhancement-mode operation, K1358 is well suited for DC-DC converters, relay drivers, motor drives and industrial power-control circuits.

Key Features

• Manufacturer: Toshiba Semiconductor

• Part Number: K1358

• Full Device Number: 2SK1358

• Device Type: N-channel power MOSFET

• MOSFET Technology: Silicon N-channel π-MOS II.5

• Product Category: High-voltage discrete power transistor

• Drain-Source Voltage: 900V

• Drain-Gate Voltage: 900V with RGS = 20kΩ

• Continuous Drain Current: 9A

• Pulsed Drain Current: 27A

• Gate-Source Voltage: ±30V

• Typical RDS(on): 1.1Ω

• Gate Threshold Voltage: 1.5V to 3.5V

• Typical Forward Transfer Admittance: 4.0S

• Maximum Drain Leakage Current: 300µA at VDS = 720V

• Operation Mode: Enhancement mode

• Maximum Power Dissipation: 150W at Tc = 25°C

• Thermal Resistance Channel-to-Case: 0.833°C/W maximum

• Thermal Resistance Channel-to-Ambient: 50°C/W maximum

• Maximum Channel Temperature: 150°C

• Storage Temperature Range: -55°C to +150°C

• Package: SC-65

• Toshiba Package Code: 2-16C1B

• Package Style: TO-3P-class through-hole package

• Number of Leads: 3

• Pin 1: Gate

• Pin 2: Drain / Heat Sink

• Pin 3: Source

• Mounting Type: Through-hole

• Approximate Device Weight: 4.6g

• Key Feature: Low drain-source on-resistance for a 900V MOSFET

• Key Feature: High forward transfer admittance

• Key Feature: Low off-state leakage current

• Typical Use: High-speed, high-current DC-DC converters, relay drives and motor drives

• Handling Note: Electrostatic-sensitive device; appropriate ESD precautions are required

• Product Generation: Legacy Toshiba high-voltage power MOSFET

• Ordering / Packaging Note: K1358 is commonly used as the device marking for Toshiba 2SK1358. Buyers should verify the full 2SK1358 designation, SC-65 / 2-16C1B package, manufacturer marking, date code and thermal requirements before replacement or production use.

Applications

K1358 can be used in high-voltage switching circuits requiring a rugged 900V N-channel MOSFET with moderate current capability. Typical applications include high-speed DC-DC converters, relay drivers, motor-drive circuits, industrial power supplies, switching regulators, inverter stages and other high-voltage power-control systems. Its 900V voltage rating and TO-3P-class package make it suitable for designs where voltage margin, heatsink mounting and switching reliability are important.

Quality & Sourcing

Antrex Electronics can support K1358 / 2SK1358 sourcing with stock availability checks, RFQ quotation, package confirmation, chip-marking review, date code verification and shipment arrangement. Buyers are encouraged to provide required quantity, target price, acceptable date code and application requirements for faster quotation support.

For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection and third-party testing support when required. OEMs, EMS providers, power-supply manufacturers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find part requests for sourcing assistance.