2SA1941-O
Toshiba PNP power transistor for high-fidelity audio amplifier output stages
- ПРОИЗВОДИТЕЛЬ
- Toshiba Semiconductor and Storage
- КАТЕГОРИЯ ТОВАРА
- Биполярные транзисторы - BJT
- Корпус
- TO-3P
- Склад
- 1,000 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Toshiba Semiconductor and Storage |
|---|---|
| КАТЕГОРИЯ ТОВАРА | Биполярные транзисторы - BJT |
| Application | Audio Power Amplifier Output Stage |
| Collector Current (IC) | -10 A |
| Collector Power Dissipation (PC) | 100 W |
| Collector-Base Voltage (VCBO) | -140 V |
| Collector-Emitter Saturation Voltage | -2.0 V Maximum |
| Collector-Emitter Voltage (VCEO) | -140 V |
| Complementary Transistor | 2SC5198 |
| Configuration | Single Transistor |
| DC Current Gain (hFE) | 55 to 160 |
| Emitter-Base Voltage (VEBO) | -5 V |
| Junction Temperature | 150°C Maximum |
| Mounting Type | Through Hole |
| Number of Pins | 3 Pins |
| Package Type | TO-3P(N) |
| RoHS Status | ROHS compliant |
| Storage Temperature Range | -55°C to +150°C |
| Transistor Polarity | PNP |
| Transition Frequency (fT) | 30 MHz |
| Техническая документация | Запросить даташит |
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Подробное описание 2SA1941-O
Product Overview
2SA1941-O is a Toshiba high-power PNP bipolar junction transistor (BJT) designed for audio amplifier output stages and high-speed switching applications. This transistor features a 140V collector-emitter voltage rating, 10A collector current capability and 100W power dissipation capacity in a TO-3P(N) through-hole package. With excellent linearity, high current capability and reliable thermal performance, it is widely used in power amplifier circuits, audio equipment, industrial control systems and high-power electronic applications.
Key Features
Manufacturer: Toshiba Electronic Devices & Storage Corporation
Part Number: 2SA1941-O
Product Type: PNP bipolar junction transistor (BJT)
Semiconductor Type: Silicon power transistor
Polarity: PNP
Collector-Emitter Voltage (VCEO): -140V
Collector Current (IC): -10A
Collector Power Dissipation (PC): 100W
DC Current Gain (hFE): 55 to 160 range
Transition Frequency (fT): 30MHz typical
Collector-Emitter Saturation Voltage: -2.0V maximum
Package Type: TO-3P(N) / SC-65-3
Mounting Type: Through-hole mounting
Number of Pins: 3 pins
Operating Junction Temperature: Up to 150°C
Complementary Device: 2SC5198 NPN transistor
Typical Applications: Audio power amplifiers, output stages, high-power switching circuits and industrial electronic equipment
Ordering Note: Buyers should verify transistor polarity, gain rank, package type and latest Toshiba datasheet before production use.
Applications
2SA1941-O is widely used in high-power analog and switching circuits requiring high current capability and stable operation. Typical applications include audio amplifier output stages, professional audio equipment, power amplifier modules, industrial control systems, power switching circuits, repair and replacement projects, and other electronic designs requiring complementary transistor pairs.
Quality & Sourcing
Antrex Electronics can support 2SA1941-O sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required delivery date, packaging requirements and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label verification, visual inspection and third-party testing support when required. OEMs, EMS providers, repair centers and electronic component buyers are welcome to submit BOM lists or hard-to-find semiconductor requirements for sourcing assistance.
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