AM81214-030

Product Overview

AM81214-030 is an STMicroelectronics / SGS high-power RF transistor designed for L-Band radar pulsed driver applications. The device uses silicon NPN RF power transistor technology with internal input and output matching networks, ruggedized construction and a metal / ceramic hermetic package for high-reliability RF operation. With 26W minimum output power, 7.2dB minimum gain and operation in the 1215MHz to 1400MHz L-Band range, it is suitable for radar transmitters, pulsed RF drivers, avionics support systems and high-frequency communication equipment.

Key Features

• Manufacturer: STMicroelectronics / SGS Semiconductor

• Part Number: AM81214-030

• Device Type: RF power transistor

• Product Category: RF & microwave transistor / bipolar transistor

• Transistor Type: Silicon NPN RF power transistor

• Frequency Band: L-Band

• Frequency Range: 1215MHz to 1400MHz commonly referenced

• Application Type: Radar pulsed driver applications

• Output Power: 26W minimum output power

• Power Gain: 7.2dB minimum gain

• Collector-Emitter Voltage: 55V maximum commonly listed

• Collector Current: 2.75A maximum commonly listed

• Power Dissipation: 36W to 63W range depending on source and operating condition; confirm exact datasheet rating before design use

• Transition Frequency: 1400MHz commonly listed

• Matching Network: Internal input and output matching

• Metallization: Refractory / gold metallization

• Structure Feature: Emitter site ballasted overlay geometry

• Ruggedness: Ruggedized VSWR ∞:1 feature listed in datasheet descriptions

• Package: Metal / ceramic hermetic RF package

• Package Reference: SO-64 / FO-83 variant references appear in distributor listings

• Terminal Count: 2 terminals commonly listed by independent sources

• Thermal Feature: Low thermal resistance package construction

• Typical Use: L-Band radar driver, pulsed RF amplifier and high-power RF stage

• Datasheet Reference: https://www.alldatasheet.com/datasheet-pdf/pdf/21922/STMICROELECTRONICS/AM81214-030.html

• Additional Datasheet Reference: https://www.alldatasheet.com/datasheet-pdf/pdf/399665/ASI/AM81214-030.html

• Ordering / Packaging Note: Buyers should verify the full manufacturer, package style, mounting format, RF matching condition, output power grade, date code, storage condition and radar application requirements before production or repair use.

Applications

AM81214-030 can be used in high-frequency RF systems that require a rugged L-Band pulsed power transistor. Typical applications include L-Band radar transmitters, pulsed radar driver stages, avionics RF modules, military communication equipment, RF power amplifiers, microwave test systems, high-reliability RF assemblies, legacy radar equipment repair and replacement of compatible RF power transistor devices. It is also suitable for BOM review where an STMicroelectronics / SGS AM81214-030 NPN RF power transistor is required.

Quality & Sourcing

Antrex Electronics can support AM81214-030 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required manufacturer, package style, RF performance requirement, date code, storage condition and application information for faster quotation support.

For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection, package inspection and third-party testing support when required. OEMs, EMS providers, RF equipment manufacturers, aerospace suppliers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find RF transistor requests for sourcing assistance.