2SK3234
TOSHIBA 2SK3234 N-channel 500V 8A high-speed MOSFET for SMPS and power switching
- ПРОИЗВОДИТЕЛЬ
- Renesas Electronics Corporation
- КАТЕГОРИЯ ТОВАРА
- МОП-транзистор
- Корпус
- TO-220F
- Склад
- 1,000 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Renesas Electronics Corporation |
|---|---|
| КАТЕГОРИЯ ТОВАРА | МОП-транзистор |
| Application | SMPS, inverter, motor drive, DC-DC converter, power switching, solenoid drive |
| Channel Type | Enhancement Mode |
| Continuous Drain Current (Id) | 8A @ Tc=25°C |
| Drain-Source Resistance (Rds(on)) | ~0.65Ω (typical) |
| Drain-Source Voltage (VDS) | 500V |
| Gate Charge (Qg) | ~25 nC |
| Gate Threshold Voltage (Vth) | 2.0 – 4.0V |
| Gate-Source Voltage (VGS) | ±30V |
| Input Capacitance (Ciss) | ~2000 pF (typical) |
| Junction Temperature | 150°C max |
| Manufacturer | Hitachi / Renesas (legacy) |
| Output Capacitance (Coss) | ~110 pF |
| Package Type | TO-220F / TO-3P (varies by suffix) |
| Power Dissipation | ~35W |
| Pulsed Drain Current | 32A |
| Rise Time | ~21 ns |
| Storage Temperature | -55°C to +150°C |
| Switching Speed | High-speed switching optimized for SMPS |
| Техническая документация | Запросить даташит |
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Подробное описание 2SK3234
Product Overview
2SK3234 is a silicon N-channel MOSFET from Hitachi Semiconductor, designed for high-speed power switching applications. The device is supplied in a TO-220CFM insulated power package and features low on-resistance, low drain leakage current, fast switching speed and avalanche capability. With a 500V drain-source voltage rating, 8A drain current and 35W power dissipation class, it is suitable for switching power supplies, DC-DC converters, industrial control boards and maintenance or replacement projects that require reliable high-voltage MOSFET switching performance.
Key Features
Manufacturer: Hitachi Semiconductor
Part Number: 2SK3234
Device Type: Silicon N-channel MOSFET
Product Category: Discrete semiconductor / power MOSFET
Package: TO-220CFM insulated power package
Polarity: N-channel
Drain-Source Voltage: 500V
Drain Current: 8A
Gate-Source Voltage: ±30V maximum class
Power Dissipation: 35W
On-Resistance: 0.65Ω typical
Drain Leakage Current: 1µA maximum at VDS = 500V
Turn-Off Fall Time: 25ns typical
Total Gate Charge: 25nC typical
Key Features: Low on-resistance, low leakage current, fast switching speed and avalanche warranty
Typical Use: High-speed power switching, switching power supplies, DC-DC converters and industrial power control circuits
Ordering / Packaging Note: 2SK3234 may be supplied as Hitachi old-stock or replacement material; buyers should verify the original brand, package marking, pin configuration, datasheet version and thermal design requirements before production use.
Applications
2SK3234 can be used in electronic circuits that require high-voltage N-channel MOSFET switching performance. Typical applications include switching power supplies, DC-DC converter stages, power control boards, industrial control equipment, inverter auxiliary circuits, communication equipment power supplies, test equipment, maintenance projects and repair applications. It is also suitable for BOM review where a 500V / 8A N-channel MOSFET in an insulated TO-220CFM package is required.
Quality & Sourcing
Antrex Electronics can support 2SK3234 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required date code, packaging requirements and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection and third-party testing support when required. OEMs, EMS providers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find part requests for sourcing assistance.
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