JANTXV2N6798U
200V 5.5A military-grade N-channel MOSFET in 18-ULCC package for high-reliability systems
- ПРОИЗВОДИТЕЛЬ
- Infineon Technologies
- КАТЕГОРИЯ ТОВАРА
- МОП-транзистор
- Корпус
- LCC
- Склад
- 1,500 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Infineon Technologies |
|---|---|
| КАТЕГОРИЯ ТОВАРА | МОП-транзистор |
| Applications | Military Power Supplies |
| Continuous Drain Current (Id) | 5.5A at 25°C |
| Diode Recovery dv/dt Capability | Yes |
| Drain-Source On Resistance (RDS(on)) | 420mΩ Max |
| Drain-Source Voltage (VDS) | 200V |
| Gate Charge (Qg) | 42.07nC Typ. |
| Gate Threshold Voltage (VGS(th)) | 4V Max |
| Gate-Source Voltage (VGS) | ±20V |
| Hermetic Package | Yes |
| Input Drive Voltage | 10V |
| Military Qualification | JANTXV Level / MIL-PRF-19500/557 |
| MOSFET Type | N-Channel MOSFET |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55°C to +150°C |
| Package Type | 18-ULCC / 18-CLCC |
| Power Dissipation (Ptot) | 25W (Tc) |
| Pulsed Drain Current (IDM) | 22A |
| Radiation / High Reliability Design | Yes |
| Repetitive Avalanche Capability | Yes |
| RoHS Compliance | No |
| Single Pulse Avalanche Energy | 207.5mJ |
| Technology | HEXFET® MOSFET |
| Техническая документация | Открыть техническую документацию PDF |
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Подробное описание JANTXV2N6798U
Product Overview
JANTXV2N6798U is a Microsemi / Infineon high-reliability N-channel power MOSFET designed for military and aerospace applications. It features a 200V drain-source voltage rating, 5.5A continuous drain current capability and advanced HEXFET® MOSFET technology, providing low on-state resistance, high transconductance and excellent avalanche and dv/dt performance. The device is qualified to MIL-PRF-19500/557 requirements with TXV screening level and is supplied in an 18-pin LCC surface-mount package, making it suitable for defense, avionics, power supplies and high-energy switching circuits.
Key Features
Manufacturer: Microsemi / Infineon Technologies
Part Number: JANTXV2N6798U
Product Type: Power MOSFET
Technology: HEXFET® MOSFET
Polarity: N-Channel
Drain-Source Voltage (VDS): 200V
Continuous Drain Current (ID): 5.5A at 25°C (TC)
Drain-Source On Resistance (RDS(on)): 420mΩ maximum
Gate-Source Voltage (VGS): ±20V maximum
Gate Threshold Voltage: 4V maximum at 250μA
Gate Charge (Qg): Approximately 42.07nC
Drive Voltage: 10V recommended
Power Dissipation: 25W at case temperature
Operating Junction Temperature: -55°C to +150°C
Package Type: LCC-18 / 18-ULCC
Package Size: Approximately 9.14mm × 7.49mm
Mounting Type: Surface Mount
Qualification: Military Grade JANTXV
Specification Standard: MIL-PRF-19500/557
Reverse Energy Capability: High avalanche energy performance
dv/dt Capability: High immunity against switching transients
Switching Performance: Fast switching capability for high-energy circuits
RoHS Status: Contains lead / Not RoHS compliant
Application Grade: Military, aerospace and high-reliability electronics
Features: Rugged construction, high reliability and excellent switching characteristics
Applications
JANTXV2N6798U is designed for high-reliability switching applications requiring military qualification and rugged electrical performance. Typical applications include aerospace electronics, defense systems, avionics equipment, military power supplies, motor control circuits, DC-DC converters, pulse power circuits and industrial high-energy switching systems.
Quality & Sourcing
Antrex Electronics can support JANTXV2N6798U sourcing with stock availability checks, RFQ quotation, date code verification and shipment arrangement. Buyers can provide quantity, packaging requirements, target price and application details for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, marking verification, visual inspection and third-party testing support when required. Aerospace suppliers, defense contractors, industrial equipment manufacturers and electronic component buyers are welcome to send BOM lists or hard-to-find military-grade semiconductor requirements for sourcing assistance.
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