IPB072N15N3
150V 100A OptiMOS™ 3 N-channel MOSFET with ultra-low RDS(on) in D2PAK package
- ПРОИЗВОДИТЕЛЬ
- Infineon Technologies
- КАТЕГОРИЯ ТОВАРА
- МОП-транзистор
- Корпус
- TO-263
- Склад
- 1,500 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Infineon Technologies |
|---|---|
| КАТЕГОРИЯ ТОВАРА | МОП-транзистор |
| Applications | 48V Telecom Systems, DC/DC Converters, Light Electric Vehicles |
| Avalanche Capability | Yes |
| Configuration | Single MOSFET |
| Continuous Drain Current (Id) | 100A at 25°C |
| Drain-Source On Resistance (RDS(on)) | 7.2mΩ Max |
| Drain-Source Voltage (VDS) | 150V |
| Gate Charge (Qg) | 70nC Typ. |
| Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Gate-Source Voltage (VGS) | ±20V |
| Input Capacitance (Ciss) | 5470pF Typ. |
| Junction-to-Case Thermal Resistance (RthJC) | 0.5K/W |
| Mounting Type | Surface Mount |
| MSL Rating | MSL 1 |
| Operating Junction Temperature | -55°C to +175°C |
| Output Capacitance (Coss) | 638pF Typ. |
| Package Type | D2PAK / TO-263-3 |
| Polarity | N-Channel |
| Power Dissipation (Ptot) | 300W |
| Pulsed Drain Current (ID,pulse) | 400A |
| Reverse Transfer Capacitance (Crss) | 240pF Typ. |
| RoHS Compliance | Yes |
| Switching Performance | High-speed switching |
| Technology | OptiMOS™ 3 |
| Техническая документация | Запросить даташит |
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Подробное описание IPB072N15N3
Product Overview
IPB072N15N3 is an Infineon Technologies OptiMOS™ 3 N-channel power MOSFET designed for medium-voltage high-current switching applications. It features a 150V drain-source voltage rating, ultra-low 7.2mΩ maximum on-resistance and high current capability up to 100A. The device uses advanced trench MOSFET technology to achieve excellent switching performance, reduced conduction losses and high power density. It is housed in a compact D2PAK (PG-TO263-3) package and is ideal for telecommunications power systems, DC-DC converters, industrial power supplies and light electric vehicle applications.
Key Features
Manufacturer: Infineon Technologies
Part Number: IPB072N15N3
Product Type: Power MOSFET
Technology: OptiMOS™ 3
Polarity: N-Channel
Drain-Source Voltage (VDS): 150V
Continuous Drain Current (ID): 100A at 25°C
Pulsed Drain Current (IDpulse): 400A
Drain-Source On Resistance (RDS(on)): 7.2mΩ maximum at 10V
Gate Threshold Voltage (VGS(th)): 2V to 4V
Typical Gate Threshold Voltage: 3V
Gate Charge (Qg): 70nC typical
Input Capacitance (Ciss): 5470pF typical
Output Capacitance (Coss): 638pF typical
Power Dissipation (Ptot): 300W maximum
Operating Junction Temperature: -55°C to +175°C
Package Type: D2PAK
Package Name: PG-TO263-3
Mounting Type: Surface Mount
Low RDS(on): Minimizes conduction losses
Fast Switching Capability: Suitable for high-frequency operation
High Power Density: Enables compact system designs
Thermal Performance: Optimized for efficient heat dissipation
Compliance: RoHS compliant
Features: Low gate charge, excellent switching performance and high reliability
Applications
IPB072N15N3 is designed for high-current switching applications requiring low conduction losses and efficient power conversion. Typical applications include 48V telecom infrastructure, intermediate bus converters (IBC), DC-DC converters, battery management systems, light electric vehicles, industrial power supplies and motor control systems.
Quality & Sourcing
Antrex Electronics can support IPB072N15N3 sourcing with stock availability checks, RFQ quotation, date code verification and shipment arrangement. Buyers can provide quantity, packaging requirements, target price and application details for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, marking verification, visual inspection and third-party testing support when required. OEMs, power supply manufacturers, industrial equipment suppliers and electronic component buyers are welcome to send BOM lists or hard-to-find MOSFET requirements for sourcing assistance.
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