IKW75N60T
600V 75A TRENCHSTOP™ IGBT with anti-parallel diode in TO-247 package for power switching
- ПРОИЗВОДИТЕЛЬ
- Infineon Technologies
- КАТЕГОРИЯ ТОВАРА
- Транзисторы IGBT
- Корпус
- TO-247
- Склад
- 1,500 шт.
- Наличие
- Текущее количество требует подтверждения.
Характеристики товара
| ПРОИЗВОДИТЕЛЬ | Infineon Technologies |
|---|---|
| КАТЕГОРИЯ ТОВАРА | Транзисторы IGBT |
| Applications | Solar Inverters, UPS, Motor Drives, Industrial Power Supplies |
| Collector Current (IC) | 75A at 100°C |
| Collector-Emitter Saturation Voltage (VCEsat) | 1.5V Typ. |
| Configuration | Single IGBT with Anti-Parallel Diode |
| Diode Forward Voltage (VF) | 1.65V typ. |
| Gate Charge (Qg) | 470nC |
| Gate-Emitter Voltage (VGES) | ±20V |
| Input Capacitance (Ciss) | 4620pF |
| Maximum Collector Current (IC) | 80A at 25°C |
| Mounting Type | Through Hole |
| Operating Junction Temperature | -40°C to +175°C |
| Output Capacitance (Coss) | 288pF |
| Package Type | TO-247-3 |
| Power Dissipation (Ptot) | 428W |
| Pulsed Collector Current (ICpuls) | 225A |
| Reverse Transfer Capacitance (Crss) | 137pF |
| RoHS Compliance | Yes |
| Short Circuit Withstand Time | 5µs |
| Switching Frequency Range | 2kHz to 20kHz |
| Technology | TRENCHSTOP™ IGBT3 |
| Turn-off Delay Time | 330ns |
| Turn-Off Energy (Eoff) | 2.9mJ |
| Turn-on Delay Time | 33ns |
| Turn-On Energy (Eon) | 2.9mJ |
| Voltage Rating (VCES) | 600V |
| Техническая документация | Запросить даташит |
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Подробное описание IKW75N60T
Product Overview
IKW75N60T is an Infineon Technologies TRENCHSTOP™ IGBT discrete device with an integrated anti-parallel diode, designed for high-efficiency power switching applications. It features a 600V collector-emitter voltage rating and 75A continuous collector current capability in a TO-247-3 package. With low conduction losses, optimized switching performance and a soft recovery diode, this IGBT provides excellent efficiency and reliability for motor control, solar inverters, UPS systems and industrial power conversion applications.
Key Features
Manufacturer: Infineon Technologies
Part Number: IKW75N60T
Product Type: IGBT Discrete with Anti-Parallel Diode
Technology: TRENCHSTOP™ IGBT
Collector-Emitter Voltage (VCES): 600V
Continuous Collector Current (IC): 75A at 100°C
Maximum Collector Current (IC): 80A at 25°C
Pulsed Collector Current (ICpuls): 225A
Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V typical
Diode Forward Voltage (VF): 1.65V typical
Gate-Emitter Voltage (VGES): ±20V
Gate Charge (Qg): 470nC typical
Switching Energy (Eon): 2.9mJ
Switching Energy (Eoff): 2.9mJ
Short Circuit Capability: 5µs
Power Dissipation (Ptot): 428W maximum
Package Type: TO-247-3
Mounting Type: Through-Hole
Operating Junction Temperature: Up to 175°C
Switching Frequency Range: 2kHz to 20kHz
Integrated Feature: Soft recovery freewheeling diode
Low Loss Design: Reduced switching and conduction losses
Application Grade: Industrial power semiconductor
Compliance: RoHS compliant
Features: High ruggedness, low EMI emission, easy parallel operation and temperature-stable performance
Applications
IKW75N60T is designed for medium-to-high power switching applications requiring high efficiency and reliability. Typical applications include photovoltaic inverters, motor drives, industrial power supplies, UPS systems, welding equipment, telecommunications power infrastructure and home appliance power conversion systems.
Quality & Sourcing
Antrex Electronics can support IKW75N60T sourcing with stock availability checks, RFQ quotation, date code verification and shipment arrangement. Buyers can provide quantity, packaging requirements, target price and application details for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, marking verification, visual inspection and third-party testing support when required. OEMs, inverter manufacturers, industrial automation suppliers and electronic component buyers are welcome to send BOM lists or hard-to-find IGBT requirements for sourcing assistance.
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