CY62167G30-45BVXI

Product Overview

The CY62167G30-45BVXI from Infineon Technologies is an asynchronous SRAM memory IC intended for systems that require volatile data storage with a parallel interface. It provides 16 Mbit of SRAM organized as 2M x 8 or 1M x 16, allowing designers to align the memory width with the host bus architecture. The device specifies a 45 ns access time and a 45 ns word or page write cycle time, which can be used to evaluate timing margins in memory subsystems. It operates from a 2.2 V to 3.6 V supply and has an operating temperature range of -40°C to 85°C (TA). The part is supplied in a 48-VFBGA (6x8) package and is intended for surface-mount assembly. As an asynchronous SRAM, it is suited to applications where the host controls read and write operations through the parallel interface rather than relying on a serial memory interface.

Key Features

• 16 Mbit volatile SRAM with a parallel interface
• Memory organization: 2M x 8 or 1M x 16
• 45 ns access time and 45 ns word/page write cycle time
• 2.2 V to 3.6 V supply voltage range
• -40°C to 85°C operating temperature range (TA)
• 48-VFBGA (6x8) surface-mount package
• MOBL™ series asynchronous SRAM

Applications

• Embedded controllers requiring volatile local storage for working variables, lookup tables, or runtime data
• Data acquisition subsystems that need temporary buffering of sampled values before host processing
• Parallel memory expansion for microprocessors or controllers that interface with asynchronous SRAM timing

Design & Procurement Notes

Design teams should confirm that the host bus voltage remains within the 2.2 V to 3.6 V supply range and that the memory controller can meet the 45 ns access and write-cycle timing. The memory organization, given as 2M x 8 or 1M x 16, affects address mapping, data bus width, and PCB routing, so the host interface should match the memory width. The 48-VFBGA (6x8) surface-mount package requires appropriate land pattern and reflow process compatibility, and the -40°C to 85°C operating temperature range should be considered during thermal design. Because the device is an asynchronous SRAM, system timing should be based on parallel read and write control signals rather than serial memory protocols.