Q50N06-07L
Q50N06-07L is a 60V N-channel power MOSFET featuring low RDS(on), fast switching, and high current capability
Quick Answer: Q50N06-07L is commonly associated with Vishay Siliconix SUD50N06-07L / SQR50N06-07L series N-channel power MOSFETs.
- Manufacturer
- Vishay Siliconix
- Product Category
- MOSFET
- Package
- TO-252
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Vishay Siliconix |
|---|---|
| Product Category | MOSFET |
| Applications | Automotive Systems, DC-DC Converters, Motor Control, Power Management, Industrial Equipment |
| Avalanche Rating | 100% UIS Tested |
| Configuration | Single MOSFET |
| Continuous Drain Current (Id) | 50A |
| Drain-Source On-Resistance (RDS(on)) | 0.0076Ω Max @ VGS=10V |
| Drain-source voltage (Vdss) | 60V |
| Gate Threshold Voltage (VGS(th)) | 1V to 3V |
| Gate-Source Voltage (VGS) | ±20V |
| Input Capacitance (Ciss) | Approx. 2000pF |
| Operating Junction Temperature | -55°C to +175°C |
| Output Capacitance (Coss) | Approx. 500pF |
| Package Type | TO-252 (DPAK) / Power Package Variant |
| Power Dissipation (Pd) | High Power Dissipation Capability |
| Qualification | AEC-Q101 Qualified (Automotive Versions) |
| Reverse Transfer Capacitance (Crss) | Approx. 150pF |
| RoHS Status | ROHS compliant |
| Switching Frequency | High-Speed Switching Capability |
| Technology | TrenchFET Power MOSFET |
| Total Gate Charge (Qg) | low gate charge design |
| Datasheet | Request Datasheet |
Procurement Snapshot
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Detailed Description for Q50N06-07L
Product Overview
Q50N06-07L is commonly associated with Vishay Siliconix SUD50N06-07L / SQR50N06-07L series N-channel power MOSFETs. The device is designed for high-current switching applications and features a 60V drain-source voltage rating, low on-resistance and high current capability. Utilizing TrenchFET® technology, Q50N06-07L provides efficient switching performance with reduced conduction losses, making it suitable for automotive electronics, DC motor control, power management systems and industrial switching applications.
Key Features
Manufacturer: Vishay Siliconix
Part Number: Q50N06-07L
Full / Related Part Number: SUD50N06-07L / SQR50N06-07L
Device Type: Power MOSFET
Product Category: Discrete Semiconductor / MOSFET
Transistor Type: N-Channel MOSFET
Technology: TrenchFET® Power MOSFET technology
Drain-Source Voltage (VDS): 60V
Continuous Drain Current (ID): 50A
Drain-Source On Resistance (RDS(on)): 7.6mΩ typical at VGS=10V
Drain-Source On Resistance (RDS(on)): 9mΩ typical at VGS=4.5V
Gate-Source Voltage (VGS): ±20V
Configuration: Single N-channel MOSFET
Gate Charge: Low gate charge for fast switching operation
Switching Performance: High-speed switching with low conduction loss
Avalanche Capability: 100% UIS tested
Automotive Qualification: AEC-Q101 qualified versions available
Package Type: TO-252 (DPAK) / TO-263 depending on variant
Mounting Type: Surface-mount package
Operating Temperature: Up to +175°C junction temperature
Typical Use: Automotive power systems, motor control, battery management and switching converters
Ordering / Packaging Note: Q50N06-07L buyers should verify exact manufacturer suffix, package type, marking code, date code and datasheet revision before production use.
Applications
Q50N06-07L is suitable for high-current switching applications including automotive power electronics, DC motor drivers, battery protection circuits, power converters, industrial controllers, load switching and general-purpose power management designs. Its low RDS(on) and high current capability help improve efficiency and thermal performance in compact electronic systems.
Quality & Sourcing
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