TIM7785-60SL

Product Overview

TIM7785-60SL is a Toshiba high-power microwave GaAs FET designed for C-band RF power amplification applications. The device is an internally matched power GaAs FET featuring high output power, high gain and low intermodulation distortion characteristics. It provides a P1dB output power of approximately 48dBm (about 63W) over the 7.7GHz to 8.5GHz frequency range, making it suitable for radar, satellite communication, RF transmitters and other high-power microwave systems. The device is housed in a hermetically sealed package for reliable operation in demanding environments. 

Key Features

• Manufacturer: Toshiba Semiconductor

• Part Number: TIM7785-60SL

• Device Type: Microwave Power GaAs FET

• Product Category: RF Power Transistor

• Technology: GaAs Field Effect Transistor

• Frequency Range: 7.7GHz to 8.5GHz

• Application Band: C-Band Microwave

• Output Power at 1dB Compression (P1dB): 48.0dBm typical

• Output Power Capability: Approximately 60W class

• Power Gain: 6.0dB typical at operating frequency

• Low Intermodulation Distortion: IM3 approximately -45dBc

• Internally Matched FET Design: Supported

• Drain-Source Voltage (VDS): 15V maximum

• Gate-Source Voltage (VGS): -5V maximum

• Drain Current (IDS): 20A maximum

• Total Power Dissipation: 187.5W

• Channel Temperature: 175°C maximum

• Storage Temperature Range: -65°C to +175°C

• Package Type: Hermetically sealed microwave package

• Number of Terminals: 3 terminals

• Mounting Type: Screw mounting

• RF Application: High-power microwave amplification

• Typical Applications: Radar systems, satellite communication, RF transmitters and defense electronics

• Reliability: Designed for demanding microwave environments

• Lifecycle Status: Legacy / specialized RF component

• Ordering / Packaging Note: Verify package marking, frequency range, date code and manufacturer traceability before procurement.

Applications

TIM7785-60SL is mainly used in high-power microwave RF systems requiring high output power and low distortion. Typical applications include C-band radar transmitters, satellite communication equipment, military communication systems, RF power amplifiers and industrial microwave equipment. 

Quality & Sourcing

Antrex Electronics can support TIM7785-60SL sourcing with stock verification, RFQ quotation, manufacturer confirmation, package inspection, date code review and shipment arrangement. As a specialized Toshiba microwave GaAs FET, customers should confirm frequency band, RF performance requirements and package condition before procurement.

Quality support can include marking inspection, visual inspection, electrical testing coordination and third-party verification when required. RF equipment manufacturers, defense electronics suppliers, communication system integrators and electronic component buyers are welcome to submit sourcing requests for TIM7785-60SL and other microwave semiconductor components.