C5200N
C5200N is an NPN power transistor for 100W Hi-Fi audio amplifier output stages
Quick Answer: C5200N is a Toshiba 2SC5200N silicon NPN power transistor designed for high-power audio amplifier output stages and high-speed switching applications.
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-3P
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Product Category | Bipolar Transistors - BJT |
| Application | Audio Power Amplifier |
| Collector Current | 15A |
| Collector Power Dissipation | 150W |
| Collector-Base Voltage | 230V |
| Collector-Emitter Saturation Voltage | 1.5V Typ |
| Collector-emitter voltage | 230V |
| Complementary Type | 2SA1943N |
| DC Current Gain | 55 to 160 |
| Emitter-Base Voltage | 5V |
| Material | Silicon |
| Mounting Type | Through Hole |
| Operating Junction Temperature | 150°C max |
| Package Type | TO-3P(N) |
| Polarity | NPN |
| Recommended Use | 100W Hi-Fi Audio Amplifier Output Stage |
| RoHS Status | Available |
| Technology | Triple-Diffused Type |
| Transition Frequency | 30MHz |
| Datasheet | Request Datasheet |
Procurement Snapshot
Key supply and purchasing information for C5200N.
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Detailed Description for C5200N
Product Overview
C5200N is a Toshiba 2SC5200N silicon NPN power transistor designed for high-power audio amplifier output stages and high-speed switching applications. The device features high voltage capability, high collector current capacity, low distortion characteristics and excellent thermal stability. With TO-3P(N) package construction and complementary pairing with 2SA1943N, it is widely used in 100W-class Hi-Fi audio power amplifiers, professional audio equipment, power amplification circuits and electronic repair applications.
Key Features
Manufacturer: Toshiba Electronic Devices & Storage Corporation
Part Number: C5200N / 2SC5200N
Device Type: Silicon NPN Power Transistor
Product Category: Bipolar Junction Transistor (BJT)
Polarity: NPN
Collector-Base Voltage (VCBO): 230V
Collector-Emitter Voltage (VCEO): 230V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 15A
Base Current (IB): 3A
Collector Power Dissipation: 150W
DC Current Gain (hFE): 55 to 160 (Depending on Classification)
Transition Frequency (fT): 30MHz Typical
Collector-Emitter Saturation Voltage: Low Saturation Voltage Characteristics
Complementary Transistor: 2SA1943N
Package Type: TO-3P(N)
Pin Count: 3 Pins
Mounting Type: Through Hole
Operating Junction Temperature: Up to +150°C
Application Type: High-Power Audio Amplifier Output Stage and Power Switching
Compliance: RoHS Compatible
Ordering / Packaging Note: Buyers should verify manufacturer marking, gain rank, package type, pin configuration and electrical specifications before production use.
Applications
C5200N / 2SC5200N is widely used in high-power analog circuits requiring high voltage and current performance. Typical applications include 100W-class Hi-Fi audio amplifiers, professional power amplifiers, speaker driver stages, audio mixing equipment, industrial power circuits, switching applications and replacement projects for legacy electronic systems.
Quality & Sourcing
Antrex Electronics can support C5200N / 2SC5200N sourcing with stock availability checks, RFQ quotation, manufacturer verification, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, required manufacturer, gain rank, target price, packaging requirements and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, marking review, visual inspection, pin verification and third-party testing support when required. OEMs, EMS providers, audio equipment manufacturers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find transistor requests for sourcing assistance.
Datasheet
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