P11NM60FD
600V N-channel power MOSFET with fast diode for high-efficiency switching applications
Quick Answer: P11NM60FD is a STMicroelectronics high-voltage N-channel Power MOSFET based on FDmesh™ technology.
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Package
- TO220
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | STMicroelectronics |
|---|---|
| Product Category | MOSFET |
| Applications | SMPS, Welding Equipment, High Voltage Converters, ZVS Phase-Shift Full Bridge Converters |
| Avalanche Capability | 100% avalanche tested |
| Body Diode | Fast recovery intrinsic diode |
| Continuous Drain Current (Id) | 11A |
| Drain Power Dissipation (PD) | 160W |
| Drain-Source On Resistance (RDS(on)) | 0.40Ω Typical |
| Drain-Source Voltage (VDS) | 600V |
| Gate Charge (Qg) | 55nC Typical |
| Gate Threshold Voltage | 3V to 4V Typical |
| Gate-Source Voltage (VGS) | ±30V |
| Input Capacitance (Ciss) | 1200pF Typical |
| Maximum Junction Temperature | +150°C |
| MOSFET Type | N-Channel Enhancement Mode |
| Mounting Type | Through Hole / Surface Mount Options |
| Operating Temperature Range | -55°C to +150°C |
| Output Capacitance (Coss) | 160pF Typical |
| Package Type | TO-220 / TO-220FP / D2PAK / I2PAK |
| Product Category | Power MOSFET |
| Reverse Transfer Capacitance (Crss) | 40pF Typical |
| Technology | FDmesh™ Power MOSFET with Fast Diode |
| Datasheet | Request Datasheet |
Procurement Snapshot
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Detailed Description for P11NM60FD
Product Overview
P11NM60FD is a STMicroelectronics high-voltage N-channel Power MOSFET based on FDmesh™ technology. The device combines low on-resistance, fast switching performance and an integrated fast-recovery body diode, making it suitable for bridge topologies and high-efficiency power conversion applications. With a 600V drain-source voltage rating, 11A current capability and TO-220/TO-220FP/D2PAK package options, P11NM60FD is widely used in switching power supplies, welding equipment, industrial converters and high-voltage power control systems.
Key Features
Manufacturer: STMicroelectronics
Part Number: P11NM60FD
Full / Related Part Number: STP11NM60FD
Device Type: Power MOSFET
Product Category: Discrete Semiconductor / MOSFET
Transistor Type: N-Channel MOSFET
Technology: FDmesh™ Power MOSFET technology
Drain-Source Voltage (VDS): 600V
Continuous Drain Current (ID): 11A
Drain-Source On Resistance (RDS(on)): 0.40Ω typical
Gate-Source Voltage (VGS): ±25V
Gate Charge: Low gate charge for improved switching efficiency
Body Diode: Integrated fast-recovery body diode
Avalanche Capability: High avalanche energy capability
Switching Performance: Fast switching with low input capacitance
Recommended Topology: ZVS phase-shift full bridge converters
Protection Feature: 100% avalanche tested
Mounting Type: Through-hole and surface-mount options
Package Type: TO-220, TO-220FP, D2PAK and I2PAK packages
Operating Junction Temperature: Up to +150°C
Typical Use: SMPS, welding equipment, industrial converters and high-voltage switching applications
Ordering / Packaging Note: P11NM60FD buyers should verify exact package type, suffix code, manufacturer marking, date code and datasheet revision before production use.
Applications
P11NM60FD is designed for high-voltage power conversion applications including switching mode power supplies, ZVS phase-shift full bridge converters, welding equipment, industrial power supplies, UPS systems and motor control circuits. Its integrated fast diode and low switching losses make it suitable for high-efficiency converter designs requiring reliable operation at high voltage levels.
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