P10NK80Z
800V N-channel power MOSFET with low RDS(on) for high-voltage switching applications
Quick Answer: P10NK80Z is a STMicroelectronics high-voltage N-channel Power MOSFET developed using SuperMESH™ technology.
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Package
- TO-220
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | STMicroelectronics |
|---|---|
| Product Category | MOSFET |
| Applications | Switching Power Supplies, SMPS, Industrial Power Control, Motor Drives |
| Avalanche Rating | 100% avalanche tested |
| Continuous Drain Current (Id) | 9A |
| Drain Power Dissipation (PD) | 160W |
| Drain-Source On Resistance (RDS(on)) | 0.78Ω Typical |
| Drain-Source Voltage (VDS) | 800V |
| Forward Transconductance (gfs) | 9.6S Typical |
| Gate Charge (Qg) | 72nC Typical |
| Gate Threshold Voltage | 3V to 4.5V |
| Gate-Source Voltage (VGS) | ±30V |
| Input Capacitance (Ciss) | 2180pF Typical |
| Maximum Junction Temperature | +150°C |
| MOSFET Type | N-Channel Enhancement Mode |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55°C to +150°C |
| Output Capacitance (Coss) | 205pF Typical |
| Package Type | TO-220 |
| Product Category | Power MOSFET |
| Reverse Transfer Capacitance (Crss) | 38pF Typical |
| Technology | SuperMESH™ Power MOSFET |
| Datasheet | View Datasheet PDF |
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Detailed Description for P10NK80Z
Product Overview
P10NK80Z is a STMicroelectronics high-voltage N-channel Power MOSFET developed using SuperMESH™ technology. The device features an 800V drain-source voltage rating, 9A continuous drain current capability and low on-resistance performance. With Zener-protected gate structure, high dv/dt capability, low gate charge and rugged avalanche performance, P10NK80Z is designed for demanding switching applications including offline power supplies, industrial converters, motor drives and high-voltage power control systems.
Key Features
Manufacturer: STMicroelectronics
Part Number: P10NK80Z
Full / Related Part Number: STP10NK80Z
Device Type: Power MOSFET
Product Category: Discrete Semiconductor / MOSFET
Transistor Type: N-Channel MOSFET
Technology: SuperMESH™ Power MOSFET technology
Drain-Source Voltage (VDS): 800V
Continuous Drain Current (ID): 9A
Drain-Source On Resistance (RDS(on)): 0.78Ω typical
Gate-Source Voltage (VGS): ±30V
Gate Charge: Approximately 72nC
Power Dissipation: Up to 160W
Avalanche Capability: 100% avalanche tested
Protection Feature: Zener-protected gate structure
Switching Performance: High dv/dt capability and low intrinsic capacitance
Mounting Type: Through-hole mounting
Package Type: TO-220 package
Operating Junction Temperature: -55°C to +150°C
Typical Use: Switching power supplies, converters, industrial control and high-voltage switching circuits
Ordering / Packaging Note: P10NK80Z buyers should verify exact package type, manufacturer marking, suffix code, date code and datasheet revision before production use.
Applications
P10NK80Z is suitable for high-voltage switching applications including offline SMPS power supplies, AC/DC converters, industrial motor controllers, lighting systems, UPS equipment and power management circuits. Its high breakdown voltage, rugged avalanche capability and optimized switching characteristics make it suitable for reliable operation in demanding power electronics designs.
Quality & Sourcing
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