MJW21195/MJW21196
High-power complementary audio transistors rated 250V, 16A, 200W in TO-247 package
Quick Answer: MJW21195 and MJW21196 are ON Semiconductor complementary silicon power transistors designed for high-power audio output, linear amplification and high-reliability switching applications.
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-247
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | onsemi |
|---|---|
| Product Category | Bipolar Transistors - BJT |
| Applications | High Power Audio Amplifiers |
| Collector-Base Voltage (VCBO) | 400V |
| Collector-Emitter Saturation Voltage | 1V Typical |
| Collector-Emitter Voltage (VCEO) | 250V |
| Continuous Collector Current (IC) | 16A |
| DC Current Gain (hFE) | 20 Minimum at IC=8A |
| Emitter-Base Voltage (VEBO) | 5V |
| MJW21195 Polarity | PNP |
| MJW21196 Polarity | NPN |
| Mounting Type | Through Hole |
| Operating Junction Temperature | -65°C to +150°C |
| Package Type | TO-247-3 |
| Peak Collector Current | 30A |
| Pin Configuration | Base-Collector-Emitter |
| RoHS Status | Lead-Free Package Available |
| Safe Operating Area (SOA) | High SOA Capability |
| Technology | Silicon Power Transistor |
| Thermal Resistance Junction-to-Case | 0.7°C/W |
| Total Power Dissipation (PD) | 200W |
| Transition Frequency (fT) | 4MHz |
| Datasheet | Request Datasheet |
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Detailed Description for MJW21195/MJW21196
Product Overview
MJW21195 and MJW21196 are ON Semiconductor complementary silicon power transistors designed for high-power audio output, linear amplification and high-reliability switching applications. MJW21195 is a PNP transistor and MJW21196 is an NPN transistor, forming a complementary pair with 250V collector-emitter voltage rating, 16A continuous collector current capability and 200W power dissipation. These devices utilize advanced Perforated Emitter technology to provide excellent gain linearity, high safe operating area (SOA) performance and low distortion characteristics for demanding power amplifier and linear circuit designs.
Key Features
Manufacturer: ON Semiconductor (onsemi)
Part Number: MJW21195_MJW21196
Full / Related Part Number: MJW21195 (PNP) / MJW21196 (NPN)
Device Type: Complementary silicon power transistor
Product Category: Bipolar Junction Transistor (BJT) / Power transistor
Transistor Type: MJW21195 PNP and MJW21196 NPN complementary pair
Collector-Emitter Voltage: 250V
Collector-Base Voltage: 400V
Emitter-Base Voltage: 5V
Continuous Collector Current: 16A
Peak Collector Current: 30A
Total Power Dissipation: 200W
DC Current Gain: hFE minimum 20 at IC = 8A
Frequency Transition: 4MHz typical
Technology: Perforated Emitter transistor technology
Package Type: TO-247 through-hole package
Thermal Resistance: Junction-to-case 0.7°C/W
Operating Temperature: -65°C to +150°C junction temperature range
Typical Use: High-power audio amplifiers, linear power circuits and precision output stages
Ordering / Packaging Note: MJW21195_MJW21196 buyers should verify transistor polarity, package marking, date code, authenticity and manufacturer documentation before production use.
Applications
MJW21195 and MJW21196 are widely used in high-power audio amplifier output stages, professional audio equipment, linear power amplifiers, motor control support circuits, disk head positioning systems and other applications requiring high voltage capability, high current handling and excellent linearity. The complementary PNP/NPN configuration enables efficient push-pull amplifier designs with improved audio performance and reliability.
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