HGT1S10N120BNS
IGBT 1200V 35A 298W TO263AB
- Manufacturer
- onsemi
- Product Category
- IGBT Transistors
- Package
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Stock
- 565 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | onsemi |
|---|---|
| Product Category | IGBT Transistors |
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 100 nC |
| IGBT Type | NPT |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Power - Max | 298 W |
| Product status | Obsolete |
| Supplier Device Package | TO-263 (D2Pak) |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Td (on/off) @ 25°C | 23ns/165ns |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Datasheet | View Datasheet PDF |
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