BLV194
UHF NPN RF power transistor for 900MHz Class-AB communication amplifiers
Quick Answer: BLV194 is a Philips / NXP UHF NPN RF power transistor designed for common-emitter class-AB operation in the 900MHz communications band.
- Manufacturer
- NXP USA Inc.
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT171A
- Stock
- 1,500 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | NXP USA Inc. |
|---|---|
| Product Category | Bipolar Transistors - BJT |
| Application | 900MHz Communication RF Amplifiers |
| Collector Capacitance | 26pF typ. |
| Collector Current | 3A max |
| Collector Power Dissipation | 46W max |
| Collector-Base Voltage | 32V max |
| Collector-emitter voltage | 16V max |
| DC Current Gain | 25 min. |
| Emitter-Base Voltage | 3V max |
| Features | Emitter Ballasting Resistors, Gold Metallization |
| Junction Temperature | 200°C Max |
| Lead Isolation | All leads isolated from mounting base |
| Manufacturer | Philips Semiconductors / NXP Semiconductors |
| Mounting Style | Flange Mount |
| Operating Mode | Common Emitter, Class-AB |
| Package / Case | SOT171 |
| Package Type | Flanged Ceramic Package |
| Product Type | UHF RF Power Transistor |
| Technology | Silicon Planar Epitaxial |
| Transistor Type | NPN Bipolar Transistor |
| Typical Frequency Band | 900MHz |
| Datasheet | Request Datasheet |
Procurement Snapshot
Key supply and purchasing information for BLV194.
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Detailed Description for BLV194
Product Overview
BLV194 is a Philips / NXP UHF NPN RF power transistor designed for common-emitter class-AB operation in the 900MHz communications band. The device uses silicon planar epitaxial transistor technology and is built in a SOT171 flanged package with a ceramic cap for RF power amplifier applications. With emitter-ballasting resistors, gold metallization, UHF power capability and rugged RF package construction, it is suitable for 900MHz communication transmitters, RF driver stages, mobile radio equipment, telemetry systems, low-power base station amplifiers and RF equipment repair projects.
Key Features
Manufacturer: Philips Semiconductors / NXP Semiconductors
Part Number: BLV194
Device Type: UHF RF power transistor
Product Category: RF transistor / bipolar RF power transistor
Transistor Type: Silicon NPN RF power transistor
Polarity: NPN
Technology: Silicon planar epitaxial transistor technology
Frequency Band: UHF communications band
Typical Operating Frequency: 900MHz communications band
Operating Mode: Common-emitter class-AB operation
Output Power: 16W class output power commonly listed by RF distributor references
Gain: 7dB class gain commonly listed in RF distributor specifications
Typical Supply Voltage: 12.5V commonly listed for RF amplifier operation
Collector-Emitter Voltage VCEO: 16V maximum commonly listed
Collector-Base Voltage VCBO: 32V maximum commonly listed
Emitter-Base Voltage VEBO: 3V maximum commonly listed
Collector Current IC: 3A maximum commonly listed
Collector Power Dissipation: 46W maximum commonly listed
Junction Temperature Maximum: +200°C commonly listed
Package: SOT171 flanged package with ceramic cap
Mounting Type: Flange / RF power transistor mounting
Lead Isolation: All leads are isolated from the mounting base according to public datasheet description
Thermal Feature: Emitter-ballasting resistors support an optimized temperature profile
Reliability Feature: Gold metallization supports excellent reliability in RF power operation
Matching Requirement: External input and output matching networks are required for the target frequency and output power
Bias Requirement: RF bias, collector supply, impedance matching and thermal design should follow the official datasheet and application circuit
Typical Use: 900MHz RF power amplifier, UHF transmitter stage, communication equipment and RF driver circuit
Key Features: NPN silicon RF transistor, 900MHz class-AB use, SOT171 ceramic flanged package, emitter ballasting and gold metallization
Datasheet Reference: https://www.alldatasheet.com/datasheet-pdf/pdf/16562/PHILIPS/BLV194.html
Additional Datasheet Reference: https://datasheet4u.com/datasheets/NXP/BLV194/124456
RF Distributor Reference: https://www.rfmw.com/products/detail/blv194-p1db/267068/
Ordering / Packaging Note: Buyers should verify the full Philips / NXP ordering code, package style, top marking, date code, RoHS status, storage condition, RF matching requirement, bias condition, heatsink design and target frequency before production or repair use.
Applications
BLV194 can be used in RF systems that require a UHF NPN power transistor for 900MHz class-AB amplifier operation. Typical applications include 900MHz communication transmitters, mobile radio power amplifiers, telemetry transmitters, RF driver stages, low-power base station amplifier modules, wireless data equipment, industrial communication devices, RF test circuits, communication equipment repair and legacy RF board replacement. It is also suitable for BOM review where a Philips / NXP BLV194 UHF RF power transistor is required.
Quality & Sourcing
Antrex Electronics can support BLV194 sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required Philips / NXP suffix, frequency band, output power requirement, package type, date code, storage condition and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection, package inspection and third-party testing support when required. OEMs, EMS providers, RF equipment manufacturers, communication equipment suppliers, radio repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find RF power transistor requests for sourcing assistance.
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