FZ600R12KE3
single-switch IGBT power module rated at 1200V / 600A
- Manufacturer
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- Module
- Stock
- 185 pcs
- Availability
- Current quantity subject to confirmation.
Product Attributes
| Manufacturer | Infineon Technologies |
|---|---|
| Product Category | IGBT Modules |
| Collector-Emitter Saturation Voltage | 1.7V typ / 2.15V max |
| Collector-Emitter Voltage, VCES | 1200V |
| Compliance | RoHS compliant, lead-free |
| Configuration | Single Switch |
| Diode Forward Current | 600A |
| Diode Forward Voltage | 1.65V typ / 2.15V max |
| Diode Peak Forward Current | 1200A |
| Diode Reverse Voltage, VRRM | 1200V |
| Diode Type | Emitter Controlled 3 Diode |
| Gate Charge | 5.60µC typ |
| Gate Threshold Voltage | 5.0V min / 5.8V typ / 6.5V max |
| Gate-Emitter Voltage, VGES | ±20V |
| Input Capacitance | 42.0nF typ |
| Internal Gate Resistor | 1.3Ω typ |
| Max Collector Current | 600A |
| Module Dimensions | 106.4 × 61.4mm |
| Nominal Collector Current, IC nom | 600A |
| Operating Junction Temperature | -40°C to +125°C |
| Package | AG-62MMES |
| Product status | Active |
| Product Type | IGBT Power Module |
| Qualification | Industrial |
| Repetitive Peak Collector Current, ICRM | 1200A |
| Reverse Transfer Capacitance | 1.70nF typ |
| Series / Housing | 62mm module |
| Technology | IGBT3 - E3 / TRENCHSTOP™ IGBT3 |
| Thermal Resistance, Diode Junction-to-Case | 0.08 K/W |
| Thermal Resistance, IGBT Junction-to-Case | 0.045 K/W |
| Total Power Dissipation | 2800W |
| Datasheet | Request Datasheet |
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