PART NUMBER

FMV21N50ES

500V N-channel silicon power MOSFET with low loss, low noise and high avalanche durability

Quick Answer: FMV21N50ES is a Fuji Electric SuperFAP-E3S series N-channel silicon power MOSFET designed for high-voltage switching power applications.

Product Category
MOSFET
Package
TO-220F
Stock
1,500 pcs
Availability
Current quantity subject to confirmation.
RFQ includes: Price Stock confirmation Date Code Lead Time
Product photos & testing support available on request.

Product Attributes

Manufacturer Fuji Electric Co., Ltd.
Product Category MOSFET
Applications Switching Regulators, UPS, DC-DC Converters
Channel Temperature (Tch) 150°C
Drain Current (Id) 21A
Drain-Source On Resistance (RDS(on)) 0.27Ω max.
Drain-Source Voltage (VDS) 500V
Gate Threshold Voltage (VGS(th)) 4.2V typ.
Gate-Source Voltage (VGS) ±30V
Isolation Voltage 2kVrms
Manufacturer Fuji Electric
Maximum Power Dissipation 120W (Tc=25°C)
Mounting Style Through Hole
Non-Repetitive Avalanche Energy (EAS) 714.5mJ
Operating Temperature Range -55°C to +150°C
Package Type TO-220F (SLS)
Peak Diode Recovery -di/dt 100A/μs
Peak Diode Recovery dV/dt 5.7kV/μs
Product Category Power MOSFET
Pulsed Drain Current (IDP) 84A
Repetitive Avalanche Energy (EAR) 12mJ
Series SuperFAP-E3S
Transistor Type N-Channel MOSFET
Datasheet Request Datasheet
PURCHASING INFORMATION

Procurement Snapshot

Key supply and purchasing information for FMV21N50ES.

Check Price & Availability
Part Number FMV21N50ES
Availability 1,500 pcs listed Current quantity subject to confirmation.
Packaging & Condition Packaging confirmation available Manufacturer packaging, label and package condition can be reviewed on request.
Date Code & Lot Verification available Date code, lot and label details can be reviewed on request.
Inspection Support Inspection & testing support Visual review, X-ray or additional testing can be arranged.
Procurement Support Volume & shortage sourcing OEM, EMS, hard-to-find and long-term supply requirements supported.
SOURCING CAPABILITIES

Why Source from Antrex Electronics?

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Independent Distribution Support

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Label, lot, date code and available supply-chain documentation can be reviewed before order confirmation.

Inspection & Testing

Visual inspection, X-ray and third-party testing support can be arranged when required.

Global Procurement Support

Support for OEM, EMS, distributors and international sourcing requirements across individual parts and BOM projects.

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Component Traceability
Traceability Label, lot & documentation review
Testing Support
Testing Support X-ray & third-party testing

Detailed Description for FMV21N50ES

Product Overview

FMV21N50ES is a Fuji Electric SuperFAP-E3S series N-channel silicon power MOSFET designed for high-voltage switching power applications. The device features a 500V drain-source voltage rating, 21A continuous drain current capability and low on-resistance characteristics for reduced conduction loss. With low switching noise, controlled dv/dt performance, improved gate stability and high avalanche durability, it is suitable for switching regulators, UPS systems, DC-DC converters and industrial power conversion equipment. :contentReference[oaicite:0]{index=0}

Key Features

  • Manufacturer: Fuji Electric

  • Part Number: FMV21N50ES

  • Device Type: N-Channel Silicon Power MOSFET

  • Product Category: Power Semiconductor Transistor

  • Series: SuperFAP-E3S Series

  • Channel Type: N-Channel Enhancement Mode

  • Drain-Source Voltage (VDS): 500V

  • Continuous Drain Current (ID): 21A

  • Pulsed Drain Current (IDP): 84A

  • Drain-Source On Resistance (RDS(on)): 0.27Ω Maximum

  • Gate-Source Voltage (VGS): ±30V

  • Gate Threshold Voltage: 4.2V ±0.5V

  • Maximum Power Dissipation: 120W (Tc=25°C)

  • Avalanche Capability: High Avalanche Durability

  • Non-Repetitive Avalanche Energy: 714.5mJ

  • Repetitive Avalanche Energy: 12mJ

  • Switching Characteristics: Low Power Loss and Low Noise Switching

  • Gate Drive Feature: Reduced VGS Ringing During Switching

  • Peak Diode Recovery dV/dt: 5.7kV/µs

  • Peak Diode Recovery -di/dt: 100A/µs

  • Operating Temperature Range: -55°C to +150°C

  • Package Type: TO-220F (SLS)

  • Mounting Type: Through Hole

  • Isolation Voltage: 2kVrms

  • Terminal Configuration: Drain, Gate, Source

  • Typical Applications: Switching Regulators, UPS Equipment, DC-DC Converters, Industrial Power Supplies and Inverter Circuits

  • Product Status: Legacy / Maintenance Product

  • Ordering Note: Buyers should verify exact package type, electrical specifications, marking code, date code and replacement compatibility before production use.

Applications

FMV21N50ES is designed for high-voltage power switching systems requiring efficient MOSFET operation and reliable thermal performance. Typical applications include offline switching power supplies, uninterruptible power supplies (UPS), DC-DC converters, industrial automation equipment, inverter systems, power control modules and repair projects involving Fuji Electric SuperFAP-E3S MOSFET devices. :contentReference[oaicite:1]{index=1}

Quality & Sourcing

Antrex Electronics can support FMV21N50ES sourcing with stock availability checks, RFQ quotation, manufacturer verification, package confirmation, date code review and shipment arrangement. For legacy semiconductor projects, buyers can provide quantity requirements, acceptable date codes, packaging requirements and application information for faster quotation support.

For quality control, Antrex Electronics can help arrange product photos, marking review, visual inspection, electrical testing and third-party verification when required. OEMs, EMS providers, industrial equipment manufacturers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find power semiconductor requests for sourcing assistance.

Datasheet

       Download FMV21N50ES Datasheet PDF    

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