PART NUMBER

FMA19N60E

FMA19N60E is a Fujitsu 600V N-channel silicon power MOSFET in TO-220F package, designed for high-voltage switching applications

Quick Answer: FMA19N60E is a Fuji Electric SuperFAP-E3 series N-channel silicon power MOSFET designed for high-voltage switching applications.

Product Category
MOSFET
Package
TO220F
Stock
1,500 pcs
Availability
Current quantity subject to confirmation.
RFQ includes: Price Stock confirmation Date Code Lead Time
Product photos & testing support available on request.

Product Attributes

Manufacturer Fuji Electric Co., Ltd.
Product Category MOSFET
Applications Switching Regulators, UPS Systems, DC-DC Converters, Power Supplies
Avalanche Energy 799 mJ
Channel Mode Enhancement Mode
Continuous Drain Current (Id) 19 A
Drain Power Dissipation 130 W
Drain-Source On Resistance (RDS(on)) 0.31 Ω Typical
Drain-Source Voltage (VDS) 600 V
Forward Transconductance 13 S Typical
Gate Threshold Voltage 2.5 V to 3.5 V
Gate-Source Voltage (VGS) ±30 V
Input Capacitance (Ciss) 3600 pF Typical
Isolation Voltage 2 kVrms
MOSFET Type N-Channel
Mounting Type Through Hole
Operating Junction Temperature -55°C to +150°C
Output Capacitance (Coss) 310 pF Typical
Package Type TO-220F
Pulsed Drain Current (IDP) 76 A
Reverse Transfer Capacitance (Crss) 23 pF Typical
RoHS Status ROHS compliant
Series 19N60E
Switching Frequency Capability High-speed switching
Technology Silicon Power MOSFET
Total Gate Charge 105 nC Typical
Datasheet Request Datasheet
PURCHASING INFORMATION

Procurement Snapshot

Key supply and purchasing information for FMA19N60E.

Check Price & Availability
Part Number FMA19N60E
Availability 1,500 pcs listed Current quantity subject to confirmation.
Packaging & Condition Packaging confirmation available Manufacturer packaging, label and package condition can be reviewed on request.
Date Code & Lot Verification available Date code, lot and label details can be reviewed on request.
Inspection Support Inspection & testing support Visual review, X-ray or additional testing can be arranged.
Procurement Support Volume & shortage sourcing OEM, EMS, hard-to-find and long-term supply requirements supported.
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Testing Support
Testing Support X-ray & third-party testing

Detailed Description for FMA19N60E

Product Overview

FMA19N60E is a Fuji Electric SuperFAP-E3 series N-channel silicon power MOSFET designed for high-voltage switching applications. The device features a 600V drain-source voltage rating, 19A continuous drain current capability, low power loss characteristics and high avalanche durability. With optimized switching performance, reduced gate ringing and reliable high-frequency operation, it is suitable for switching regulators, UPS systems, DC-DC converters and industrial power supply applications. :contentReference[oaicite:0]{index=0}

Key Features

  • Manufacturer: Fuji Electric

  • Part Number: FMA19N60E

  • Device Type: N-Channel Silicon Power MOSFET

  • Product Category: Power Semiconductor Transistor

  • Series: SuperFAP-E3 Series

  • Channel Type: N-Channel Enhancement Mode

  • Drain-Source Voltage (VDS): 600V

  • Continuous Drain Current (ID): 19A

  • Pulsed Drain Current (IDP): 76A

  • Gate-Source Voltage (VGS): ±30V

  • Maximum Power Dissipation: Up to 130W (Tc=25°C)

  • Drain-Source On Resistance (RDS(on)): Approx. 0.31Ω Typical

  • Gate Threshold Voltage: 3.0V Typical

  • High Avalanche Capability: Supported

  • Switching Performance: Low Power Loss and Low Noise Operation

  • Gate Structure: Reduced Gate Ringing Design

  • Input Capacitance: Approximately 3600pF

  • Total Gate Charge: Approximately 105nC

  • Operating Temperature Range: -55°C to +150°C

  • Package Type: TO-220F / TO-220 Full Mold Package

  • Mounting Type: Through Hole

  • Isolation Voltage: 2kVrms

  • Typical Applications: Switching Regulators, UPS Systems, DC-DC Converters, Industrial Power Supplies and Inverter Circuits

  • Product Status: Legacy / Obsolete Component

  • Ordering Note: Buyers should verify exact package style, electrical parameters, mounting dimensions, suffix marking and replacement compatibility before production use.

Applications

FMA19N60E is designed for high-voltage power switching circuits requiring reliable MOSFET performance and efficient switching characteristics. Typical applications include offline switching power supplies, UPS equipment, industrial power converters, DC-DC converter systems, inverter circuits, motor drive auxiliary power supplies and repair projects for legacy Fuji Electric power equipment. :contentReference[oaicite:1]{index=1}

Quality & Sourcing

Antrex Electronics can support FMA19N60E sourcing with stock availability checks, RFQ quotation, manufacturer verification, package confirmation, date code review and shipment arrangement. For legacy semiconductor projects, buyers can provide quantity requirements, acceptable date codes, packaging requirements and application information for faster quotation support.

For quality control, Antrex Electronics can help arrange product photos, marking review, visual inspection, electrical testing and third-party verification when required. OEMs, EMS providers, industrial equipment manufacturers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find power semiconductor requests for sourcing assistance.

Datasheet

       Download FMA19N60E Datasheet PDF    

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