PART NUMBER

FLL4101K-4C

FLL4101K-4C is a high-power L-band GaAs FET from Fujitsu, designed for RF power amplifier applications with high gain and efficiency

Quick Answer: FLL4101K-4C is a Fujitsu Semiconductor L-band high-power GaAs FET designed for high-frequency RF power amplifier applications.

Product Category
MOSFET
Package
SMD
Stock
1,500 pcs
Availability
Current quantity subject to confirmation.
RFQ includes: Price Stock confirmation Date Code Lead Time
Product photos & testing support available on request.

Product Attributes

Manufacturer Fuji Electric Co., Ltd.
Product Category MOSFET
Application Band L-Band
Applications Wireless Local Loop (WLL), Base Station Amplifiers, RF Power Amplifiers
Device Configuration Single FET
Drain current 12 A Typical
Drain Voltage 10 V
Frequency Coverage Broadband Operation
Frequency Range 3.4 GHz to 3.7 GHz
Gate Voltage -2 V Typical
High Linearity Suitable for Communication Systems
Input Return Loss High Performance RF Matching
Matching Type Partially Matched
Mounting Type Surface Mount / Flange Mount
Operating Mode Class AB Operation
Operating Temperature -40°C to +85°C
Output Power 40 W Typical
Output Power (Pout) 46.0 dBm Typical
Package Material Metal Ceramic
Package Type Hermetically Sealed Metal/Ceramic Package
Power Added Efficiency (PAE) 44% Typical
Power Gain 11.5 dB Typical
Reliability High Reliability RF Device
RoHS Status ROHS compliant
Technology Gallium Arsenide (GaAs) FET
Datasheet Request Datasheet
PURCHASING INFORMATION

Procurement Snapshot

Key supply and purchasing information for FLL4101K-4C.

Check Price & Availability
Part Number FLL4101K-4C
Availability 1,500 pcs listed Current quantity subject to confirmation.
Packaging & Condition Packaging confirmation available Manufacturer packaging, label and package condition can be reviewed on request.
Date Code & Lot Verification available Date code, lot and label details can be reviewed on request.
Inspection Support Inspection & testing support Visual review, X-ray or additional testing can be arranged.
Procurement Support Volume & shortage sourcing OEM, EMS, hard-to-find and long-term supply requirements supported.
SOURCING CAPABILITIES

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Inspection & Testing

Visual inspection, X-ray and third-party testing support can be arranged when required.

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Support for OEM, EMS, distributors and international sourcing requirements across individual parts and BOM projects.

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Component Traceability
Traceability Label, lot & documentation review
Testing Support
Testing Support X-ray & third-party testing

Detailed Description for FLL4101K-4C

Product Overview

FLL4101K-4C is a Fujitsu Semiconductor L-band high-power GaAs FET designed for high-frequency RF power amplifier applications. The device is a partially matched 40W GaAs FET optimized for operation in the 3.4GHz to 3.7GHz frequency range, offering high output power, high gain, high efficiency and excellent linearity. With a hermetically sealed package and reliable RF performance, it is suitable for wireless communication infrastructure, broadband wireless access systems, RF transmitters and industrial microwave applications. :contentReference[oaicite:0]{index=0}

Key Features

  • Manufacturer: Fujitsu Semiconductor

  • Part Number: FLL4101K-4C

  • Device Type: RF Power GaAs FET

  • Product Category: High Frequency RF Semiconductor

  • Technology: Gallium Arsenide (GaAs) FET

  • Frequency Band: L-Band

  • Operating Frequency Range: 3.4GHz to 3.7GHz

  • Output Power: 40W Class RF Power Device

  • Typical Output Power: 46.0dBm

  • Typical Gain: 11.5dB

  • Power Added Efficiency (PAE): 44% Typical

  • Device Configuration: Partially Matched RF FET

  • Linearity Performance: High Linearity RF Amplification

  • Matching Type: Internal Partial Matching Network

  • Package Type: Hermetically Sealed RF Package

  • Mounting Type: Through Hole / Flange Mount RF Device

  • Application Frequency: Broadband Wireless Communication

  • Reliability Feature: High Stability and Long-Term Reliability

  • Typical Applications: Wireless Local Loop (WLL), RF Power Amplifiers, Base Station Equipment, Microwave Transmitters and Communication Systems

  • Product Status: Legacy / Obsolete RF Component

  • Replacement Note: Buyers should verify frequency range, output power, gain, bias conditions, package dimensions and RF matching requirements before selecting replacement devices.

  • Datasheet PDF: Fujitsu FLL4101K-4C Datasheet

Applications

FLL4101K-4C is designed for RF power amplification systems requiring high output power and efficient operation in the L-band frequency range. Typical applications include wireless broadband access equipment, communication transmitters, RF repeater systems, microwave links, industrial RF systems and maintenance projects for legacy Fujitsu RF amplifier designs. :contentReference[oaicite:1]{index=1}

Quality & Sourcing

Antrex Electronics can support FLL4101K-4C sourcing with stock availability checks, RFQ quotation, manufacturer verification, package confirmation, date code review and shipment arrangement. For RF semiconductor projects, buyers can provide quantity requirements, acceptable date codes, RF specifications, packaging requirements and application details for faster quotation support.

For quality control, Antrex Electronics can help arrange product photos, marking review, visual inspection, electrical testing and third-party verification when required. OEMs, EMS providers, wireless equipment manufacturers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find RF component requests for sourcing assistance.

Datasheet

       Download FLL4101K-4C Datasheet PDF    

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