CY7S1041G30-10BVXI

Product Overview

The Cypress Semiconductor Corp CY7S1041G30-10BVXI is a 4Mbit volatile SRAM device organized as 256K x 16 and accessed through a parallel interface. It is an asynchronous SRAM with a 10 ns access time and a 10 ns word or page write cycle time, providing direct memory connection to a processor, controller, or programmable logic without a synchronous clock. The device operates from a 2.2 V to 3.6 V supply and is supplied in a 48-VFBGA (6x8) surface-mount package. Its 16-bit data organization supports word-oriented memory transfers, while the BGA format supports surface-mount assembly in embedded designs.

Key Features

• 4Mbit volatile SRAM memory capacity with 256K x 16 organization
• Asynchronous SRAM technology with parallel memory interface
• 10 ns access time and 10 ns word or page write cycle time
• 2.2 V to 3.6 V supply voltage operating range
• 48-VFBGA (6x8) surface-mount package

Applications

• Embedded systems that use a processor or microcontroller to buffer temporary data in local SRAM
• Programmable logic designs that require a parallel memory interface for temporary storage
• Test and measurement equipment that stores short-duration waveform or measurement data
• Industrial control modules that retain active runtime data while powered

Design & Procurement Notes

When selecting the CY7S1041G30-10BVXI, confirm that the host logic can drive a 16-bit parallel SRAM bus and meet the 10 ns access and write cycle timing. The 2.2 V to 3.6 V supply range should be matched to the system power rail and voltage margin requirements. Because the device is volatile, designs must account for loss of stored data when supply is removed, and the 48-VFBGA (6x8) package requires surface-mount assembly and appropriate land-pattern planning. The -40°C to 85°C operating temperature range should be checked against the intended ambient environment before finalizing the memory architecture.