CY7C1512V18-250BZC

Product Overview

The Cypress Semiconductor Corp CY7C1512V18-250BZC is a volatile synchronous SRAM device using QDR II technology. It provides 72 Mbit of storage organized as 4M x 18 and uses a parallel memory interface with a 250 MHz clock frequency. The device operates from a 1.7 V to 1.9 V supply and is specified for an ambient temperature range of 0 °C to 70 °C. It is a surface-mount 165-LBGA memory device with a 165-FBGA (15 x 17) package.

Key Features

• 72 Mbit volatile SRAM capacity in a 4M x 18 organization.
• Synchronous QDR II SRAM architecture with a 250 MHz clock frequency.
• Parallel memory interface for connection to a controller or logic device.
• 1.7 V to 1.9 V supply voltage range.
• 0 °C to 70 °C operating ambient temperature range.
• Surface-mount 165-LBGA package, 165-FBGA (15 x 17).

Applications

• Data buffering in communications and networking equipment.
• Embedded systems that require a parallel synchronous SRAM for temporary data storage.
• Test and measurement instruments using a 72 Mbit buffer for fast data capture.
• Processing subsystems that need a 4M x 18 memory organization between logic devices.

Design & Procurement Notes

Design teams should confirm that the 1.7 V to 1.9 V supply rail, 250 MHz clock timing, and 4M x 18 parallel interface align with the selected controller or logic device. The 0 °C to 70 °C ambient range should be checked against the target operating environment. PCB layout should account for the surface-mount 165-LBGA package and the 165-FBGA (15 x 17) package format. Because the memory is volatile, system-level power sequencing and data-retention planning should be considered during design.