CY7C106B-25VCT

Product Overview

The CY7C106B-25VCT from Cypress Semiconductor Corp is an asynchronous SRAM memory device with a 1Mbit capacity organized as 256K x 4. It uses a parallel memory interface and a 28-SOJ surface-mount package, with a 28-BSOJ case width of 0.300 in (7.62 mm). The device operates from a 4.5 V to 5.5 V supply and specifies a 25 ns access time, with a 25 ns write cycle time for word and page operations. Its volatile memory format supports designs that require temporary read/write storage while power is maintained, and its 0°C to 70°C ambient operating range defines the specified temperature envelope.

Key Features

• 1Mbit asynchronous SRAM with a volatile memory format
• 256K x 4 memory organization
• Parallel memory interface for direct bus-connected designs
• 25 ns access time and 25 ns write cycle time for word and page operations
• 4.5 V to 5.5 V supply voltage range
• 0°C to 70°C ambient operating temperature range
• Surface-mount 28-SOJ package, with a 28-BSOJ case width of 0.300 in (7.62 mm)

Applications

• Temporary data buffering in embedded systems that use a parallel memory bus
• Memory expansion for microcontroller designs requiring volatile read/write storage
• Short-term data retention in systems operating within the 4.5 V to 5.5 V supply range and asynchronous SRAM timing

Design & Procurement Notes

When selecting this device for a board design, confirm that the system supply remains within 4.5 V to 5.5 V and that the ambient operating range of 0°C to 70°C is acceptable for the intended environment. Because the memory is volatile, the design must provide continuous power if data retention is required, and the host logic must match the parallel interface and 25 ns timing characteristics. The 256K x 4 organization should be checked against the data width of the controller or bus, and the surface-mount 28-SOJ package requires compatible land patterns and assembly processes.