CY7C1041CV33-12VI

Product Overview

The Cypress Semiconductor Corp CY7C1041CV33-12VI is an asynchronous static random-access memory device offering 4Mbit of volatile storage in a 256K x 16 organization. It uses a parallel memory interface and provides 12 ns access timing, with a 12 ns word/page write cycle time, for systems that require direct parallel memory access. The device operates from a 3 V to 3.6 V supply and is specified for an ambient temperature range of -40°C to 85°C. It uses a 44-SOJ surface-mount package; the case is 44-BSOJ with a 10.16 mm width, for board layouts that use a 44-SOJ footprint.

Key Features

• 4Mbit volatile SRAM memory organized as 256K x 16.
• Asynchronous SRAM technology with a parallel memory interface.
• 12 ns access time and 12 ns word/page write cycle time.
• 3 V to 3.6 V supply voltage range.
• Operating temperature range of -40°C to 85°C (TA).
• Surface-mount 44-SOJ package; case 44-BSOJ with a 10.16 mm width.

Applications

• Working memory for embedded controllers that require direct parallel memory access.
• Data buffering in instrumentation and control boards that use volatile SRAM.
• Temporary storage in test and measurement equipment using asynchronous SRAM timing.

Design & Procurement Notes

Designers should verify that the host controller supports a 16-bit parallel asynchronous SRAM interface and that the system power rail remains within 3 V to 3.6 V. The 44-SOJ surface-mount package requires footprint and land-pattern compatibility, including the 10.16 mm width when layout clearances are critical. Because the memory is volatile, data retention depends on continuous power; if retention after power removal is required, the system must provide that function separately. Timing margins should be checked against the 12 ns access and 12 ns word/page write cycle time, especially in systems with address, data, and control signal skew. The -40°C to 85°C ambient range should be compared with the actual board thermal environment.