CY7C1041BV33-20ZIT

Product Overview

The CY7C1041BV33-20ZIT from Cypress Semiconductor Corp is a 4Mbit asynchronous SRAM memory IC organized as 256K x 16 and accessed through a parallel interface. It uses a volatile SRAM architecture and is supplied in a 44-TSOP II surface-mount package with a 10.16 mm body width. The device operates from a 3V to 3.6V supply and is specified for an ambient temperature range of -40°C to 85°C (TA). Its 20 ns access time and 20 ns write cycle time support timing-sensitive embedded memory functions where a parallel bus interface is required.

Key Features

• 4Mbit volatile SRAM memory with a 256K x 16 organization.
• Asynchronous SRAM technology with a parallel memory interface and 16-bit data organization.
• 20 ns access time and 20 ns write cycle time.
• Operating supply voltage range of 3V to 3.6V.
• Specified ambient operating temperature range of -40°C to 85°C (TA).
• Surface-mount 44-TSOP II package with 10.16 mm width.

Applications

• Buffering data in embedded controllers and microprocessor-based systems.
• Temporary storage in FPGA-based systems that use an external parallel SRAM.
• Working memory in test, measurement, and control equipment where volatile storage is acceptable.

Design & Procurement Notes

Designers should confirm that the host controller can meet the 20 ns access time and 20 ns write cycle time across the full 3V to 3.6V supply range. The 256K x 16 organization requires a parallel address and data bus plan, including appropriate bus width and signal routing in the PCB layout. Because the memory is volatile, system power design should account for data loss if supply is interrupted or falls outside the specified range. The 44-TSOP II surface-mount package, 10.16 mm width, and -40°C to 85°C (TA) temperature range should be considered for board area, assembly process, and thermal placement.