CY7C1011DV33-10ZSXI

Product Overview

The CY7C1011DV33-10ZSXI from Cypress Semiconductor Corp is an asynchronous SRAM memory IC with a volatile 2 Mbit capacity. It is organized as 128K x 16 and uses a parallel memory interface, making it suitable for designs that use a 16-bit data path. The device operates from a 3 V to 3.6 V supply and provides a 10 ns access time, with a 10 ns word and page write cycle time. It is offered in a surface-mount 44-TSOP II package, specified for an operating temperature range of -40°C to 85°C (TA).

Key Features

• 2 Mbit volatile asynchronous SRAM memory from Cypress Semiconductor Corp
• 128K x 16 memory organization with a parallel interface
• 10 ns access time and 10 ns word/page write cycle time
• 3 V to 3.6 V supply voltage range
• Operating temperature range of -40°C to 85°C (TA)
• Surface-mount 44-TSOP II package with 0.400 inch (10.16 mm) width

Applications

• Memory expansion for embedded systems using a parallel SRAM interface
• Data buffering for 16-bit parallel read and write operations
• Temporary volatile storage in embedded processing designs

Design & Procurement Notes

For selection, verify that the system provides a 3 V to 3.6 V supply, since the device is specified for this voltage range. The 128K x 16 organization and parallel interface require a controller or bus capable of 16-bit parallel addressing and data transfer. The 10 ns access time and 10 ns word/page write cycle time should be checked against the controller timing budget. The 44-TSOP II surface-mount package and -40°C to 85°C (TA) operating range should also be considered for board layout and ambient temperature conditions.