CY7C1011DV33-10IKA

Product Overview

The CY7C1011DV33-10IKA from Cypress Semiconductor Corp is a 2 Mbit asynchronous SRAM integrated circuit. It provides a volatile parallel memory array organized as 128K x 16, with a 10 ns access time and a 10 ns word/page write cycle time. The device uses a 3.0 V to 3.6 V supply and has an operating temperature range of -40°C to 85°C.

Key Features

• 2 Mbit volatile SRAM memory array.
• Asynchronous SRAM technology with a parallel memory interface.
• 128K x 16 memory organization.
• 10 ns access time.
• 10 ns write cycle time for word and page operations.
• 3.0 V to 3.6 V supply voltage range.
• -40°C to 85°C operating temperature range.

Applications

• Embedded systems that use a parallel SRAM array as a temporary buffer for runtime data.
• Measurement and instrumentation equipment that holds sampled data briefly before processing or transfer.
• Communication equipment that stages short-term data in a volatile memory buffer.

Design & Procurement Notes

When selecting the CY7C1011DV33-10IKA from Cypress Semiconductor Corp, verify that the host controller can drive a parallel SRAM interface and that the system can support a 128K x 16 memory organization. The 10 ns access time and the 10 ns word/page write cycle time should be checked against the controller timing budget. The 3.0 V to 3.6 V supply range and the -40°C to 85°C operating temperature range should be compared with the board power and thermal environment. Because the memory type is volatile, account for its behavior in power-loss conditions.