CY62136FV30LL-55ZSXE

Product Overview

The CY62136FV30LL-55ZSXE from Cypress Semiconductor Corp is a volatile SRAM integrated circuit with a 2Mbit memory capacity organized as 128K x 16. It uses an asynchronous parallel memory interface and provides a 55 ns access time and 55 ns write cycle time for word or page operations. The device is offered in a 44-TSOP II surface-mount package with a 0.400 in / 10.16 mm body width. Its specified operating supply voltage range is 2.2 V to 3.6 V, and its operating temperature range is -40°C to 125°C TA.

Key Features

• 2Mbit volatile SRAM memory
• 128K x 16 memory organization
• Asynchronous parallel interface
• 55 ns access time
• 55 ns write cycle time for word or page operations
• 2.2 V to 3.6 V supply voltage range
• -40°C to 125°C operating temperature range (TA)
• 44-TSOP II surface-mount package with 0.400 in / 10.16 mm width
• MOBL™ series

Applications

• Embedded systems that require a volatile parallel SRAM for temporary data storage
• Systems using a 16-bit parallel memory interface for memory expansion
• Board-level buffering in electronic instruments or control systems
• Designs operating over a -40°C to 125°C ambient temperature range

Design & Procurement Notes

Design and procurement considerations should focus on the device's 16-bit parallel asynchronous interface, 55 ns access and write timing, and 2.2 V to 3.6 V supply range. The 128K x 16 organization supports memory subsystems that expect a 2Mbit SRAM with word or page write cycle timing. The 44-TSOP II package requires surface-mount PCB land patterns and clearance for the 10.16 mm body width. The -40°C to 125°C operating temperature range should be checked against the expected ambient conditions of the final assembly. Confirm that the host controller, bus timing, and power supply are compatible with the specified voltage and timing values.